Synthesis and Characterization of Zinc Oxide and Zinc Oxide Doped with Chlorine Nanoparticles as Novel <i>α</i>-Amylase Inhibitors

In this study we used a chemical solution method from oxalic acid (OX. acid) and zinc acetate (ZnAc) to prepare Zinc Oxide nanoparticles (ZnONPs) and Zinc Oxide nanoparticles doped with Chlorine (Cl:ZnONPs). The characterizations (FTIR, X-ray, SEM, TEM) of ZnONPs and Cl:ZnONPs were determined. Amylase inhibitors of ZnONPs and Cl:ZnONPs also were determined. SEM indicated that the ZnONPs and Cl:ZnONPs have an average particle size of 46.65 - 74.64 nm. TEM images of the ZnONPs and Cl:ZnONPs showed the round shaped. Compounds b, d and e exhibited significant inhibitory activity against amylase enzyme (from 69.21 ± 1.44 to 76.32 ± 0.78), respectively, and were comparable with that of acarbose (86.32 ± 0.63) at 1000 μg, thereby, projecting ZnONPs and Cl:ZnONPs as α-amylase inhibitors.

Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering

High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.

Characterization and Doping Effect of Cu-Doped ZnO Films

Cu(copper)-doped ZnO(zinc oxide)was synthesized using Cu(NO3)2·3H2O(copper(II)nitrate)and Zn(NO3)2·6H2O(zinc nitrate)by chemical co-precipitation method.The weight percentages of dopant in solution were Cu(2,3,and 5 wt%).Cu-doped ZnO thin films were prepared on p-Si(100)substrate by screen printing method.Cu-doped ZnO/Si films were annealed at different temperatures from 300 to 700°C.In this study,Cu-doped ZnO structures were prepared by a simple precipitation technique,and characterized by various techniques such as XRD(X-ray diffraction)and SEM(scanning electron microscope).The electrical properties of Cu-doped ZnO/Si were measured.It has found that Cu-doped ZnO/Si films can be used as optoelectronic devices.

Synthesis and Characterization of Rare Earth Ion Doped Nano ZnO

Zinc oxide(ZnO) doped with erbium at different concentrations was synthesized by solid-state reaction method and characterized by X-ray diffraction(XRD), scanning electron microscopic(SEM), UVabsorption spectroscopy, photoluminescence(PL) study and vibrating sample magnetometer. The XRD studies exhibit the presence of wurtzite crystal structure similar to the parent compound ZnO in 1% Er^(3+)doped Zn O,suggesting that doped Er^(3+)ions sit at the regular Zn^(2+)sites. However, same studies spread over the samples with Er^(3+)content>1% reveals the occurrence of secondary phase. SEM images of 1% Er^(3+)doped ZnO show the polycrystalline nature of the synthesized sample. UV-visible absorption spectrum of Er^(3+)doped ZnO nanocrystals shows a strong absorption peak at 388 nm due to ZnO band to band transition. The PL study exhibits emission in the visible region, due to excitonic as well as defect related transitions. The magnetizationfield curve of Er^(3+)doped ZnO nanocrystals showed ferromagnetic property at room-temperature.

Synthesis,Crystal Structural and Electrical Conductivity Properties of Fe-Doped Zinc Oxide Powders at High Temperatures

The synthesis,crystal structure and electrical conductivity properties of Fe-doped ZnO powders（in the range of 0.25-15 mol%） were reported in this paper.I-phase samples,which were indexed as single phase with a hexagonal（wurtzite） structure in the Fe-doped ZnO binary system,were determined by X-ray diffraction（XRD）.The solubility limit of Fe in the ZnO lattice is 3 mol% at 950℃.The above mixed phase was observed.And the impurity phase was determined as the cubic-ZnFe 2 O 4 phase when compared with standard XRD data using the PDF program.This study focused on single I-phase ZnO samples which were synthesized at 950℃ because the limit of the solubility range is the widest at this temperature.The lattice parameters a and c of the I-phase decreased with Fe-doping concentration.The morphology of the I-phase samples was analyzed with a scanning electron microscope.The grain size of the I-phase samples increased with heat treatment and doping concentration.The electrical conductivity of the pure ZnO and single I-phase samples was investigated using the four-probe dc method at 100-950℃ in air atmosphere.The electrical conductivity values of pure ZnO,0.25 and 3 mol% Fe-doped ZnO samples at 100℃ were 2×10-6,1.7×10-3 and 6.3×10-4 S.cm-1,and at 950℃ they were 3.4,8.5 and 4 S.cm-1,respectively.

Effect of Doping and High-Temperature Annealing on the Structural and Electrical Properties of Zn_(1-X)Ni_XO(0≤X≤0.15) Powders

This paper reported the synthesis, crystal structure and electrical conductivity properties of Ni-doped ZnO powders （i.e. Zn1-xNixO binary system, X=0, 0.0025, 0.005, 0.0075 and in the range 0.01≤X〈0.15）. I- phase samples, which were indexed as single phase with a hexagonal （wurtzite） structure in the Zn1-xNixO binary system, were determined by X-ray diffraction （XRD）. The widest range of the I-phase was determined as 0≤X≤0.03 at 1200℃; above this range the mixed phase was observed. The impurity phase was determined as NiO when compared with standard XRD data, using the PDF program. We focused on single f-phase ZnO samples which were synthesized at 1200℃ because of the widest range of solubility limit at this temperature. It was observed that the lattice parameters a and c of the I-phase decreased with Ni doping concentration. The morphology of the I-phase samples was analyzed with a scanning electron microscope. The electrical conductivity of the pure ZnO and single I-phase samples were studied by using the four-probe dc method at temperatures between 100 and 950℃ in air atmosphere. The electrical conductivity values of pure ZnO and 3 mol% Ni-doped ZnO samples at 100℃C were 2×10^-6 and 4.8×10^-6 Ω-1.cm^-1, and at 950℃ they were 1.8 and 3.6 Ω-1cm-1, respectively. In other words, electrical conductivity increased with Ni doping concentration.

High conductive and transparent AI doped ZnO films for a-SiGe：H thin film solar cells

Al doped zinc oxide （AZO） films were prepared by mid-frequency magnetron sputtering for silicon （Si） thin film solar cells. Then, the influence of deposition parameters on the electrical and optical properties of the films was studied. Results showed that high conductive and high transparent AZO thin films were achieved with a minimum resistivity of 2.45 × 10^-4 Ω·cm and optical transmission greater than 85% in visible spectrum region as the films were deposited at a substrate temperature of 225℃ and a low sputtering power of 160 W. The optimized films were applied as back reflectors in a-SiGe：H solar cells. A relative increase of 19% in the solar cell efficiency was achieved in comparison to the cell without the ZnO films doped with Al （ZnO：Al）.