Enhanced Work Function of Al-Doped Zinc-Oxide Thin Films by Oxygen Inductively Coupled Plasma Treatment

Al-doped zinc-oxide （AZO） thin films treated by oxygen and chlorine inductively coupled plasma （ICP） were compared. Kelvin probe （KP） and X-ray photoelectron spectroscopy （XPS） were employed to characterize the effect of treatment. The results of KP measurement show that the surface work function of AZO thin films can increase up to 5.92 eV after oxygen ICP （O-ICP）＇s treatment, which means that the work function was increased by at least 1.1 eV. However, after the treatment of chlorine ICP （CI-ICP）, the work function increased to 5.44 eV, and the increment was 0.6 eV. And 10 days later, the work function increment was still 0.4 eV after O-ICP＇s treatment, while the work function after Cl-ICP＇s treatment came back to the original value only after 48 hours. The XPS results suggested that the O-ICP treatment was more effective than CI-ICP for enhancing the work function of AZO films, which is well consistent with KP results.

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.

Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering

High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

Double-layer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis

Indium doped zinc oxide （ZnO：In） thin films were prepared by ultrasonic spray pyrolysis on corning eagle 2000 glass substrate. 1 and 2 at.% indium doped single-layer ZnO：In thin films with different amounts of acetic acid added in the initial solution were fabricated. The 1 at.% indium doped single-layers have triangle grains. The 2 at.% indium doped single-layer with 0.18 acetic acid adding has the resistivity of 6.82 × 10^-3 Ω. cm and particle grains. The doublelayers structure is designed to fabricate the ZnO：In thin film with low resistivity （2.58 × 10^-3 Ω. cm） and good surface morphology. It is found that the surface morphology of the double-layer ZnO：In film strongly depends on the substratelayer, and the second-layer plays a large part in the resistivity of the doublewlayer ZnO：In thin film. Both total and direct transmittances of the double-layer ZnO：In film are above 80% in the visible light region. Single junction a-Si：H solar cell based on the double-layer ZnO：In as front electrode is also investigated.

Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

Si-doped zinc oxide（SZO） thin films are deposited by using a co-sputtering method,and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures.The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated.Moreover,the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure.The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm,and the optical band gap of the SZO film gradually increases with increasing Si content.The Si-doping can effectively suppress the grain growth of ZnO,revealed by atomic force microscope analysis.Compared with that of the undoped ZnO TFT,the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10^-12 A,and thus the on/off current ratio is increased by more than two orders of magnitude.In summary,the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 10^6 and superior stability under gate-bias and drain-bias stress.

Deposition and Characterisation of Nitrogen-Doped Zinc Oxide Thin Films by MOCVD Using Zinc Acetate—Ammonium Acetate Precursor

The synthesis and comprehensive analysis of nitrogen-doped zinc oxide thin films grown from a compound precursor of zinc acetate and ammonium acetate has been reported. The precursor was processed in different ratios of the zinc acetate-ammonium acetate additives, and each combination was used to deposit a thin film using metalorganic chemical vapour deposition (MOCVD) method. The produced thin films were characterised using Rutherford backscattering (RBS) spectroscopy, uv-visible spectrometry, x-ray diffractometry, four point probe measurements and optical microscopy. The deposited thin films showed a fairly consistent zinc:oxygen:nitrogen ratio of 4.4:3.7:1, the film structures were quasicrystalline and the sheet resistivities were high, while other familiar characteristics like optical transmittance, bandgap, thermal stability, etc. were maintained in the grown films. Applications in device fabrication and active sensor devices were hence envisaged as the emergent potentials of the thin films.

Development on transparent conductive ZnO thin films doped with various impurity elements

A general review of recent research progress in fabricating transparent conductive ZnO thin films by means of intentional doping and codoping with In, Ga, A1, Mg, Li, F, H, N, and P, divided into metals and nonmetals, is presented in this article. The main emphasis is placed on introducing and discussing the recent research achievements on the mechanisms of the incorporation of these impurities, and their effects on the electrical and optical properties. Lastly, this article concludes with a summary of the present state of investigations on doping elements in fabricating functional ZnO thin films for photoelectric applications, and with our personal view of the perspective of future studies on doped ZnO thin films.

Dual Manipulation of Ferromagnetism in Co-Doped ZnO Thin Films by Surfactant and n-Type Carriers

We present a conceptually-new approach “dual manipulation effect” using the surfactant passivation and the electron carrier doping for mediating intrinsic ferromagnetism in Codoped ZnO dilute magnetic semiconductor (DMS) thin films. The first-principles calculations show that the surface passivation by hydrogen serves as a magnetism switch for the Co-O-Co magnetic coupling at the surface of the thin film, and thus can control the spin polarization of the doped Co atoms. Meanwhile, the electron carrier doping can further function as an effective layerlike ferromagnetism mediator for the underneath layer. The dual manipulation effect sheds light on the essential magnetism origin of n-type Co:ZnO DMS thin films, and may be used as an alternative strategy for enhancing the ferromagnetism in other n-type DMS oxides thin films.

Fabrication and properties of ZAO powder,sputtering target materials and the related films

Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.

Influence of the distance between target and substrate on the properties of transparent conducting Al-Zr co-doped zinc oxide thin films

Highly transparent and conducting Al-Zr co-doped zinc oxide （ZAZO） thin films were successfully prepared on glass substrate by direct current （DC） magnetron sputtering at room temperature. The distance between target and substrate was varied from 45 to 70 mm. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 70 to 50 mm. However, as the distance decreases further, the crystallinity decreases and the electrical resistivity increases. When the distance between target and substrate is 50 ram, it is found that the lowest resistivity is 6.9 × 10^-4Ω cm. All the deposited films show a high average transmittance of above 92% in the visible range.

Influence of Deposition Pressure on Properties of ZnO：Al Films Fabricated by RF Magnetron Sputtering

Transparent conductive aluminum doped zinc oxide（ZnO：Al,AZO） films were prepared on glass substrates by rf（radio frequency） magnetron sputtering from ZnO： 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure（PAr） was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction（XRD） and scanning electron microscopy（SEM） showed that the ZnO：Al thin films were（002） oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10^（-4） Ω？cm（sheet resistance=9.6 Ω/sq. for a thickness=600 nm） obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible（UV-VIS） spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.

Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering

Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.

薄膜厚度对ZnO∶Al透明导电膜性能的影响

铝掺杂的氧化锌 (ZnO∶Al)透明导电膜是采用射频磁控溅射法在有机衬底 (Polypro pyleneadipate,PPA)和Corning 70 5 9玻璃上制备的。详细研究了薄膜的结构性质、光学和电学性质随薄膜厚度的变化关系。制备的ZnO∶Al薄膜具有 (0 0 2 )面的单一择优取向的多晶六角纤锌矿结构 ,性能优良的薄膜电阻率在两种衬底上分别为 2 .5 5× 1 0 - 3 Ω·cm和1 .89× 1 0 - 3 Ω·cm ,平均透射率达到了 80 %和 85 %。

纯Ar气氛中退火对Al掺杂ZnO薄膜性能的影响

用射频磁控溅射技术制备了高度择优取向的Al掺杂ZnO（ZAO）薄膜,并对薄膜在纯氩气中进行了400-600℃的退火处理。利用X射线衍射（XRD）、扫描电子显微镜（SEM）、X射线光电子能谱（XPS）、光谱仪和四探针测试仪等对退火前后薄膜进行了表征和光学、电学性能研究。研究表明,纯氩气中退火处理对ZAO薄膜的晶体、光学和电学性能有影响。原位沉积的薄膜电阻率2.59Ωcm,可见光区透过率约70%。500℃纯Ar气氛中退火1h后,ZAO薄膜的平均晶粒有所长大,薄膜内应力达到最小,接近于松弛状态;薄膜可见光区平均透过率从70%提高到80%左右;而薄膜的电阻率变化不明显,从2.59Ωcm降低到1.13Ωcm。

种子层及掺杂浓度对溶胶-凝胶法制备ZnO∶Al薄膜光电性能的影响

本文采用溶胶-凝胶法以提拉的方式在普通玻璃基底上制备出n型掺杂具有优良光电性能的氧化锌掺铝（AZO）薄膜,并以磁控溅射AZO薄膜为种子层引导液相法所制备AZO薄膜生长。Al掺杂浓度区间为0.25at%～5.00at%。通过X射线衍射仪、场发射扫描电子显微镜、轮廓仪、方块电阻测试仪、霍尔效应测试仪、紫外-可见-红外分光光度计分别研究了薄膜物相、微观结构、膜厚及光电性能,进一步分析了Al掺杂浓度、种子层对薄膜光电性能的影响。结果表明：经10次提拉所制备薄膜可见光透过率85%以上。Al掺杂浓度、种子层的引入对AZO薄膜的光电性能有重要影响。无种子层时,掺杂浓度为0.50at%的AZO薄膜在5%H2、95%N2还原气氛下于550℃保温60 min得到最优电学性能,方块电阻约为166Ω/□,电阻率约为1.99×10-3Ω·cm;预镀AZO种子层所制备薄膜方块电阻下降到约42Ω/□,电阻率下降到约7.56×10-4Ω·cm。

Al掺杂纳米氧化锌导电粉的性能与结构

以Zn(NO3)2.6H2O,Al(NO3)3.9H2O,尿素为原料,采用均相沉淀法,制备出碱式碳酸锌粉末,之后将前驱体在氢气气氛下煅烧,制得Al掺杂氧化锌导电粉。利用SEM,TGA,XPS和XRD等分析手段对材料性能进行表征,研究了Al掺杂氧化锌导电性能的影响。结果表明:随着Al 3+掺杂量的增大,粉体体积电阻率先降低后升高,Al 3+掺杂含量在1.5%(摩尔分数)时电阻率最低,为1.05×105Ω.cm。掺杂后的ZnO为六方纤锌矿结构,颗粒呈类椭球形,粒度分布窄,导电性能明显提高。

沸腾回流法制备Al元素掺杂ZnO及表征

采用液相沸腾回流法,制备出不同含量Al元素掺杂的ZnO半导体材料,并对产物进行了XRF,XRD,SEM及其导电性能的表征.实验结果表明:Al元素掺杂后产物ZnO的结构仍然为六方晶系纤锌矿结构;Al元素掺杂量不是无限增大的,当Al元素掺杂量达到24.0 mmol/L时,就会趋于饱和;Al元素掺杂的ZnO的导电性能比纯ZnO有所提高,因此证明了这是一条比较优化的工艺合成路线.

退火温度对ITO/Cu/AZO透明导电薄膜结构及性能的影响

采用射频与直流磁控交替溅射法在石英玻璃载玻片上制备了氧化铟锡(ITO)/Cu/Al掺杂ZnO(AZO)(45 nm/10 nm/45 nm)组合结构的透明导电薄膜,并在不同退火温度下对薄膜进行真空热处理。利用X射线衍射仪(XRD)、紫外-可见分光光度计、四探针电阻测试仪等表征手段,系统地研究了退火温度对ITO/Cu/AZO复合薄膜晶体结构和光电性能的影响。结果显示,经过不同温度的真空退火处理,薄膜的晶体结构和导电性能得到显著改善和提高,薄膜可见光平均透过率随着退火温度的升高先增加后降低。对比发现,在气压5×10^(-3)Pa、温度150℃下退火制备的ITO/Cu/AZO结构薄膜表现出最佳的综合性能,薄膜具有较强的(222)和(440)晶面衍射峰,在400~800 nm光波范围平均透过率约为80.5%,电导率约为1.76×10^(3) S/cm,综合品质因数达到约2.12×10^(-3)/Ω。

掺杂量对ZnO:Al膜电学性能的影响

使用电子束蒸发法沉积了铝掺杂的氧化锌透明导电膜．通过霍尔系数测量及ＸＲＤ、ＳＥＭ测试分析，研究了掺铝量对膜的电学性能的影响，结果表明；掺杂量影响膜的载流子浓度、迁移率及结晶状况，当Ａｌ_２Ｏ_３与 ＺｎＯ重量比为 １．５％时，沉积的膜具有较低的电阻率．

基于ZnO模板原位合成Cu/Zn/Al-LDHs/ZnO薄膜的工艺及性能研究

采用多金属片于Na2CO3溶液中在ZnO模板表面原位合成了Cu/Zn/Al-CO3-LDHs/ZnO薄膜前体和La-Cu/Zn/Al-CO3-LDHs/ZnO复合薄膜,优化了工艺条件。借助XRD、FT-IR、UV、TG/DTA及电化学测试等手段对LDHs薄膜结构及其性能进行了表征与分析。结果表明,该薄膜中水滑石晶体的ab面平行于基体,薄膜在ZnO模板表面形成多层叠加结构;月桂酸根修饰LDHs薄膜能增强其疏水性能,薄膜与基体结合牢固,对金属锌表现出优异的耐蚀性。