Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO acti...Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.展开更多
High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe...High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.展开更多
The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions thr...The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions through a noz-zle onto a heated alumina substrate. The precursor consisted separately of aqueous solutions of tin chloride for SnO2 and zinc chloride for ZnO for single oxide cases, and aqueous solutions of tin chloride and indium nitrate for SnO2 + In2O3 and zinc chloride and indium nitrate solutions for ZnO + In2O3 for mixed oxide cases. The substrate temperature was varied accordingly for each single and mixed case. The films produced were characterized by X-ray Photoelectron Spectroscopy and Scanning Electron Microscopy. The results indicate that a non-homogenous film is formed at low temperature for both single oxides considered. The temperature has significant effect on the composition of the synthesized films of both single oxides below 450℃. The results for mixed oxides show that the best homogeneous films are obtained for 80 wt% ZnO + 20 wt% In2O3, and 80 wt% SnO2 + 20 wt% In2O3.展开更多
Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ...Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ZTO films have been prepared by spin-coating,followed by thermal treatment in oxygen atmosphere.The morphology,composition,crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM),Atomic Emission Spectrometry (AES),X-ray Diffraction (XRD) and UV-vis spectrophotometry.The conductivity of ZTO is about 9.8×10-9 S/cm,as estimated from the current-voltage (I-V) curve.The effect of the thermal treatment process on the morphology of ZTO thin films is also discussed.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61290305 and 91021020)the Natural Science Foundation of Zhejiang Province,China (Grant No.Z6100117)
文摘Annealing effect on the performance of fully transparent thin-film transistor （TTFT）, in which zinc tin oxide （ZnSnO） is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/（V.s） and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.
基金Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
文摘High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
文摘The influence of processing parameters is investigated on the structural characteristics of single and mixed oxides produced by spray pyrolysis technique. The films were synthesized by spraying precursor solutions through a noz-zle onto a heated alumina substrate. The precursor consisted separately of aqueous solutions of tin chloride for SnO2 and zinc chloride for ZnO for single oxide cases, and aqueous solutions of tin chloride and indium nitrate for SnO2 + In2O3 and zinc chloride and indium nitrate solutions for ZnO + In2O3 for mixed oxide cases. The substrate temperature was varied accordingly for each single and mixed case. The films produced were characterized by X-ray Photoelectron Spectroscopy and Scanning Electron Microscopy. The results indicate that a non-homogenous film is formed at low temperature for both single oxides considered. The temperature has significant effect on the composition of the synthesized films of both single oxides below 450℃. The results for mixed oxides show that the best homogeneous films are obtained for 80 wt% ZnO + 20 wt% In2O3, and 80 wt% SnO2 + 20 wt% In2O3.
基金supported by the National Natural Science Foundation of China (50990060)
文摘Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ZTO films have been prepared by spin-coating,followed by thermal treatment in oxygen atmosphere.The morphology,composition,crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM),Atomic Emission Spectrometry (AES),X-ray Diffraction (XRD) and UV-vis spectrophotometry.The conductivity of ZTO is about 9.8×10-9 S/cm,as estimated from the current-voltage (I-V) curve.The effect of the thermal treatment process on the morphology of ZTO thin films is also discussed.
