This paper reports that 9nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment 3.09 ±0.15μB per CrAs unit....This paper reports that 9nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment 3.09 ±0.15μB per CrAs unit. The temperature dependence of zb-CrAs resistance R shows metallic behaviour.展开更多
基金Project supported by the Key Project of Chinese Ministry of Education (Grant No 107092)a Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No 200728)a grant from the Science & Technology Commission, Chongqing, China (Grant No CSTC 2006BB2024)
文摘This paper reports that 9nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment 3.09 ±0.15μB per CrAs unit. The temperature dependence of zb-CrAs resistance R shows metallic behaviour.
