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基于ARM内核的手持设备SoC 被引量:1
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作者 杨军 凌明 +1 位作者 江巍 殷宏 《电子设计应用》 2004年第3期61-63,共3页
本文研究并开发了一款针对手持设备、内嵌ARM7TDMI内核的系统芯片。在设计这款芯片的过程中,MP3算法的软硬件分割和芯片的低功耗设计是主要挑战。本文介绍了该系统芯片的结构,并着重介绍了软硬件分割和低功耗设计技术。
关键词 手持设备 SOC ARM内核 系统芯片 微处理器 手持终端
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Investigation of radiation influences on electrical parameters of 4H-SiC VDMOS
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作者 Li Sheng Xu Zhiyuan +2 位作者 Wei Jiaxing Liu Siyang Sun Weifeng 《Journal of Southeast University(English Edition)》 EI CAS 2018年第4期474-479,共6页
The radiation influences on electrical parameters of4H-SiC vertical double-implanted metal-oxide-semiconductor field effect transistor( VDMOS) are studied. By simulations on SRIM software and SILVACO software, the ele... The radiation influences on electrical parameters of4H-SiC vertical double-implanted metal-oxide-semiconductor field effect transistor( VDMOS) are studied. By simulations on SRIM software and SILVACO software, the electrical parameters shifts of the device with defects in different regions are observed. The results indicate that the defects in different regions induced by radiations lead to different degradations of the electrical parameters. Non-ionization bulk defects in the JFET region make the drain-source on-state resistance Rdson increase,and those near the impact ionization center make the breakdown voltage Vbreakdownincrease. Moreover,the radiationinduced SiC/SiO2 interface defects,known as negative interface charges or positive interface charges,influence the electrical parameters significantly as well. The positive interface charges along the SiC/SiO2 interface above the channel region lead to a decrease in threshold voltage Vth,Rdsonand Vbreakdown,while positive interface charges along the Si C/Metal interface above the main junction of the terminal only leads to the decrease in Vbreakdown. The negative interface charges along the SiC/SiO2 interface above the channel region can make Vth,Rdsonand Vbreakdownincrease. 展开更多
关键词 4H-SiC VDMOS RADIATION TRAP interface charge electrical parameters
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