A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can...A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.展开更多
DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and mea...DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.展开更多
文摘A novel patterned-SOI LDMOS structure with a silicon window beneath the p well is proposed.The performance is simulated numerically.In comparison to SOI counterpart,the off-state and the on-state breakdown voltage can increase by 57% and 70% respectively;transconductance is flatter;I-V curves take no sign of kink in the saturation region;the device temperature is much lower even at high input power;the floating body effect and the self-heating effect are distinctly suppressed.Furthermore,the advantage of low leakage current and low output capacitance in SOI structures does not degrade.The proposed structure will be a promising choice to improve the performance and reliability of SOI power device.
文摘DSOI,bulk Si and SOI MOSFETs are fabricated on the same die successfully using local oxygen implantation process.The thermal properties of the three kinds of devices are described and compared from simulation and measurement.Both simulation and measurement prove that DSOI MOSFETs have the advantage of much lower thermal resistance of substrate and suffer less severe self heating effect than their SOI counterparts. At the same time,the electrical advantages of SOI devices can stay.The thermal resistance of DSOI devices is very close to that of bulk devices and DSOI devices can keep this advantage into deep sub micron realm.
