A novel self-alignment method for high precision silicon diffraction microlens arrays preparation and its integration with infrared focal plane arrays

Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.

Research on fast detection method of infrared small targets under resourceconstrained conditions

Infrared small target detection is a common task in infrared image processing.Under limited computa⁃tional resources.Traditional methods for infrared small target detection face a trade-off between the detection rate and the accuracy.A fast infrared small target detection method tailored for resource-constrained conditions is pro⁃posed for the YOLOv5s model.This method introduces an additional small target detection head and replaces the original Intersection over Union(IoU)metric with Normalized Wasserstein Distance(NWD),while considering both the detection accuracy and the detection speed of infrared small targets.Experimental results demonstrate that the proposed algorithm achieves a maximum effective detection speed of 95 FPS on a 15 W TPU,while reach⁃ing a maximum effective detection accuracy of 91.9 AP@0.5,effectively improving the efficiency of infrared small target detection under resource-constrained conditions.

Structural design of mid-infrared waveguide detectors based on InAs/GaAsSb superlattice

In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.

Research on the correlation between the dual diffusion behavior of zinc in InGaAs/InP single-photon avalanche photodiodes and device performance

The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.

Long wavelength infrared metalens fabricated by photolithography

Metasurfaces in the long wave infrared(LWIR)spectrum hold great potential for applications in ther-mal imaging,atmospheric remote sensing,and target identification,among others.In this study,we designed and experimentally demonstrated a 4 mm size,all-silicon metasurface metalens with large depth of focus opera-tional across a broadband range from 9µm to 11.5µm.The experimental results confirm effective focusing and imaging capabilities of the metalens in LWIR region,thus paving the way for practical LWIR applications of met-alens technology.

利用单一冷源制冷的双光路红外探测器系统

红外相机为了获取较大温度范围内的红外图像,仅利用单探测器已难以满足需要,需在光学系统中实现波段分离,利用两个探测器来接收红外信号,且使用单台机械制冷机实现双探测器的制冷.利用现有的机械制冷机,并研制专用的冷箱及专用的传热冷链,组合成机械制冷系统,达到了预定的制冷温度,实现了双探测器的制冷,并与相机本体耦合,成功实现了双光路的配准.研究表明,该方案是可行的,今后还需进一步研究,以实现双探测器温度的精确控制.

Hg_(0.6)Cd_(0.4)Te的激子光电导谱

报道了Ｈｇ０．６Ｃｄ０．４Ｔｅ红外光电导谱。

不同材料连接铰摩擦接触面的滞迟特性

依弹性体理论 ,用“假想层”法分析了由不同材料组成的连接铰摩擦接触面间的阻尼特性 ,在 Iwan描述模型的基础上 ,导出了包括弹性变形、部分滑移、整体滑移三种状态在内的接触面上的力与位移弹塑性滞迟模型 .可用于分析配合接触面的能量传递关系及其对系统动力特性的影响 ,为振动的主动控制获得更精确的数学模型提供有力的参考 .

Design of fiber-optic collector for spectrometer based on curved mirror

To enlarge the detection range of traditional fiber-optic spectrometer,two rotating parabolic mirrors were first used in the design of fiber-optic collector for spectrometer,which can extend the detection range of spectrometer from centimeter-scale to50m,as a super-low altitude remote sensing detector under passive lighting conditions.According to the performance requirements of fiber-spectrometer for optical collector,this study deduced the calculation formulae of design size of parabolic optical collector applied to different sensitivity spectrometers,different detection targets,different detection ranges and different weathers.Based on the calculation results,the model of fiber-optic collector with a diameter of16mm and a height of7.8mm was designed by ZEMAX.And then,TracePro,a light simulation software,was applied to ray tracing.The simulation results of optical radiation magnification agrees well with theoretical value,and the relative error is less than0.78%.This optical collector can effectively extend the detection range of spectrometer and expand its application fields and scopes.Compared with traditional refractive optical collector,it has several advantages of compact structure,low weight and low cost.