From the FeCl3 solutions of different concentrations, the polycrystalline iron oxide ultrthee particles of different sizes were obtained through hydrolysis. The results of their UV-visible spectroscopy eambit the &quo...From the FeCl3 solutions of different concentrations, the polycrystalline iron oxide ultrthee particles of different sizes were obtained through hydrolysis. The results of their UV-visible spectroscopy eambit the "size quatization effects". In an electrolyte, the dependence of the photocurrent-potential relations on particle size of the dispersed iron oxide particles or the adsorbed iron oxide particles on Pt electrode and redox couple are described and discusscd.展开更多
The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even ...The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn’t SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model.展开更多
文摘From the FeCl3 solutions of different concentrations, the polycrystalline iron oxide ultrthee particles of different sizes were obtained through hydrolysis. The results of their UV-visible spectroscopy eambit the "size quatization effects". In an electrolyte, the dependence of the photocurrent-potential relations on particle size of the dispersed iron oxide particles or the adsorbed iron oxide particles on Pt electrode and redox couple are described and discusscd.
文摘The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn’t SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model.
