Infrared small target detection is a common task in infrared image processing.Under limited computa⁃tional resources.Traditional methods for infrared small target detection face a trade-off between the detection rate ...Infrared small target detection is a common task in infrared image processing.Under limited computa⁃tional resources.Traditional methods for infrared small target detection face a trade-off between the detection rate and the accuracy.A fast infrared small target detection method tailored for resource-constrained conditions is pro⁃posed for the YOLOv5s model.This method introduces an additional small target detection head and replaces the original Intersection over Union(IoU)metric with Normalized Wasserstein Distance(NWD),while considering both the detection accuracy and the detection speed of infrared small targets.Experimental results demonstrate that the proposed algorithm achieves a maximum effective detection speed of 95 FPS on a 15 W TPU,while reach⁃ing a maximum effective detection accuracy of 91.9 AP@0.5,effectively improving the efficiency of infrared small target detection under resource-constrained conditions.展开更多
In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are of...In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.展开更多
The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-t...Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.展开更多
Metasurfaces in the long wave infrared(LWIR)spectrum hold great potential for applications in ther-mal imaging,atmospheric remote sensing,and target identification,among others.In this study,we designed and experiment...Metasurfaces in the long wave infrared(LWIR)spectrum hold great potential for applications in ther-mal imaging,atmospheric remote sensing,and target identification,among others.In this study,we designed and experimentally demonstrated a 4 mm size,all-silicon metasurface metalens with large depth of focus opera-tional across a broadband range from 9µm to 11.5µm.The experimental results confirm effective focusing and imaging capabilities of the metalens in LWIR region,thus paving the way for practical LWIR applications of met-alens technology.展开更多
探讨了黑碳钢表面上的 Sn O2 超细粒子的复合化学镀铜工艺。研究了镀液的温度、p H值、镀液中 Sn O2 微粒含量等因素对复合化学镀铜性能的影响 ,并检测了复合镀层的抗氧化性、耐磨性及镀层和基体的结合力。用扫描电子显微镜观察镀层表面...探讨了黑碳钢表面上的 Sn O2 超细粒子的复合化学镀铜工艺。研究了镀液的温度、p H值、镀液中 Sn O2 微粒含量等因素对复合化学镀铜性能的影响 ,并检测了复合镀层的抗氧化性、耐磨性及镀层和基体的结合力。用扫描电子显微镜观察镀层表面 Sn O2 微粒的分布及生长情况 ,并与镀铜前测得的微粒粒径作比较 ,从微观结构分析添加 Sn O2 微粒对镀层性能的影响。用 XRD对镀层进行定性分析 ,确认 Sn O2展开更多
文摘Infrared small target detection is a common task in infrared image processing.Under limited computa⁃tional resources.Traditional methods for infrared small target detection face a trade-off between the detection rate and the accuracy.A fast infrared small target detection method tailored for resource-constrained conditions is pro⁃posed for the YOLOv5s model.This method introduces an additional small target detection head and replaces the original Intersection over Union(IoU)metric with Normalized Wasserstein Distance(NWD),while considering both the detection accuracy and the detection speed of infrared small targets.Experimental results demonstrate that the proposed algorithm achieves a maximum effective detection speed of 95 FPS on a 15 W TPU,while reach⁃ing a maximum effective detection accuracy of 91.9 AP@0.5,effectively improving the efficiency of infrared small target detection under resource-constrained conditions.
基金Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,62104237,62004205)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057)+1 种基金Shanghai Science and Technology Committee Rising-Star Program(20QA1410500)Shanghai Sail Plans(21YF1455000)。
文摘In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
基金Supported by the National Natural Science Foundation of China(NSFC 62105100)the National Key research and development program in the 14th five year plan(2021YFA1200700)。
文摘Silicon(Si)diffraction microlens arrays are usually used to integrating with infrared focal plane arrays(IRFPAs)to improve their performance.The errors of lithography are unavoidable in the process of the Si diffrac-tion microlens arrays preparation in the conventional engraving method.It has a serious impact on its performance and subsequent applications.In response to the problem of errors of Si diffraction microlens arrays in the conven-tional method,a novel self-alignment method for high precision Si diffraction microlens arrays preparation is pro-posed.The accuracy of the Si diffractive microlens arrays preparation is determined by the accuracy of the first li-thography mask in the novel self-alignment method.In the subsequent etching,the etched area will be protected by the mask layer and the sacrifice layer or the protective layer.The unprotection area is carved to effectively block the non-etching areas,accurately etch the etching area required,and solve the problem of errors.The high precision Si diffraction microlens arrays are obtained by the novel self-alignment method and the diffraction effi-ciency could reach 92.6%.After integrating with IRFPAs,the average blackbody responsity increased by 8.3%,and the average blackbody detectivity increased by 10.3%.It indicates that the Si diffraction microlens arrays can improve the filling factor and reduce crosstalk of IRFPAs through convergence,thereby improving the perfor-mance of the IRFPAs.The results are of great reference significance for improving their performance through opti-mizing the preparation level of micro nano devices.
基金Supported by National Key R&D Program of China(2021YFA0715500)National Natural Science Foundation of China(NSFC)(12227901)+1 种基金Strategic Priority Research Program(B)of the Chinese Academy of Sciences(XDB0580000)Chinese Academy of Sciences President's In-ternational Fellowship Initiative(2021PT0007).
文摘Metasurfaces in the long wave infrared(LWIR)spectrum hold great potential for applications in ther-mal imaging,atmospheric remote sensing,and target identification,among others.In this study,we designed and experimentally demonstrated a 4 mm size,all-silicon metasurface metalens with large depth of focus opera-tional across a broadband range from 9µm to 11.5µm.The experimental results confirm effective focusing and imaging capabilities of the metalens in LWIR region,thus paving the way for practical LWIR applications of met-alens technology.
文摘探讨了黑碳钢表面上的 Sn O2 超细粒子的复合化学镀铜工艺。研究了镀液的温度、p H值、镀液中 Sn O2 微粒含量等因素对复合化学镀铜性能的影响 ,并检测了复合镀层的抗氧化性、耐磨性及镀层和基体的结合力。用扫描电子显微镜观察镀层表面 Sn O2 微粒的分布及生长情况 ,并与镀铜前测得的微粒粒径作比较 ,从微观结构分析添加 Sn O2 微粒对镀层性能的影响。用 XRD对镀层进行定性分析 ,确认 Sn O2
