Tungsten heavy alloys(90W-6Ni-4Mn)were prepared through spark plasma sintering(SPS)using micron-sized W,Ni,and Mn powders without ball milling as raw materials.The effects of sintering temperature on the microstructur...Tungsten heavy alloys(90W-6Ni-4Mn)were prepared through spark plasma sintering(SPS)using micron-sized W,Ni,and Mn powders without ball milling as raw materials.The effects of sintering temperature on the microstructure and mechanicalproperties of the90W-6Ni-4Mn alloys were investigated.SPS technology was used to prepare90W-6Ni-4Mn alloys withrelatively high density and excellent comprehensive performance at1150-1250°C for3min.The90W-6Ni-4Mn alloys consistedof the W phase and theγ-(Ni,Mn,and W)binding phase,and the average grain size was less than10μm.The Rockwell hardness andbending strength of alloys first increased and then decreased with increasing sintering temperature.The best comprehensiveperformance was obtained at1200°C,its hardness and bending strength were HRA68.7and1162.72MPa,respectively.展开更多
Recently, the g-C3N4-based heterojunctions have been widely investigated for their greatly enhanced photogenerated carrier separation efficiency. However, most studies are based on the study of g-C3N4 powders. In this...Recently, the g-C3N4-based heterojunctions have been widely investigated for their greatly enhanced photogenerated carrier separation efficiency. However, most studies are based on the study of g-C3N4 powders. In this study, a novel TiN/C3N4/CdS nanotube arrays core/shell structure is designed to improve the photoelectrochemical catalytic performance of the g-C3N4-based heterojunctions. Among them, TiN nanotube arrays do not respond to simulated solar light, and thus only serve as an excellently conductive nanotube arrays backbone for supporting g-C3N4/CdS heterojunctions. g-C3N4 prepared by simple liquid atomic layer deposition, which possesses appropriate energy band position, mainly acts as the electron acceptor to transport and separate electrons. Deposited CdS quantum dots obtained by successive ionic layer adsorption reaction can effectively absorb visible light and thus act as a light absorber. The TiN/C3N4/CdS nanotube arrays core/shell structure could be verified by X-ray diffractions, Raman spectra, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy elemental mappings and X-ray photoelectron spectroscopy. Compared with TiN/C3N4 nanotube arrays, the TiN/C3N4/CdS samples greatly improve the photoelectrochemical performance, which can be evaluated by photoelectrochemical tests and photoelectrochemical catalytic degradation. Especially, the optimized photocurrent density of TiN/C3N4/CdS has almost 120 times improvement on TiN/C3N4 at 0 V bias under simulated sunlight, which can be ascribed to the effective expansion of the light absorption range and separation of electron-hole pairs.展开更多
基金Projects(51464010,51461014)supported by the National Natural Science Foundation of ChinaProject(20165207)supported by the Natural Science Foundation of Hainan Province,China
文摘Tungsten heavy alloys(90W-6Ni-4Mn)were prepared through spark plasma sintering(SPS)using micron-sized W,Ni,and Mn powders without ball milling as raw materials.The effects of sintering temperature on the microstructure and mechanicalproperties of the90W-6Ni-4Mn alloys were investigated.SPS technology was used to prepare90W-6Ni-4Mn alloys withrelatively high density and excellent comprehensive performance at1150-1250°C for3min.The90W-6Ni-4Mn alloys consistedof the W phase and theγ-(Ni,Mn,and W)binding phase,and the average grain size was less than10μm.The Rockwell hardness andbending strength of alloys first increased and then decreased with increasing sintering temperature.The best comprehensiveperformance was obtained at1200°C,its hardness and bending strength were HRA68.7and1162.72MPa,respectively.
文摘Recently, the g-C3N4-based heterojunctions have been widely investigated for their greatly enhanced photogenerated carrier separation efficiency. However, most studies are based on the study of g-C3N4 powders. In this study, a novel TiN/C3N4/CdS nanotube arrays core/shell structure is designed to improve the photoelectrochemical catalytic performance of the g-C3N4-based heterojunctions. Among them, TiN nanotube arrays do not respond to simulated solar light, and thus only serve as an excellently conductive nanotube arrays backbone for supporting g-C3N4/CdS heterojunctions. g-C3N4 prepared by simple liquid atomic layer deposition, which possesses appropriate energy band position, mainly acts as the electron acceptor to transport and separate electrons. Deposited CdS quantum dots obtained by successive ionic layer adsorption reaction can effectively absorb visible light and thus act as a light absorber. The TiN/C3N4/CdS nanotube arrays core/shell structure could be verified by X-ray diffractions, Raman spectra, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy elemental mappings and X-ray photoelectron spectroscopy. Compared with TiN/C3N4 nanotube arrays, the TiN/C3N4/CdS samples greatly improve the photoelectrochemical performance, which can be evaluated by photoelectrochemical tests and photoelectrochemical catalytic degradation. Especially, the optimized photocurrent density of TiN/C3N4/CdS has almost 120 times improvement on TiN/C3N4 at 0 V bias under simulated sunlight, which can be ascribed to the effective expansion of the light absorption range and separation of electron-hole pairs.
