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Effect of Relaxation Time on Electron Transport Properties in Double-Barrier Structures
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作者 戴振宏 倪军 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第4期604-608,共5页
Using a time-dependent quantum-kinetic simulation for the non-equilibrium electron transport properties of double-barrier devices, we have investigated and analyzed the effects of the relaxation time on electron trans... Using a time-dependent quantum-kinetic simulation for the non-equilibrium electron transport properties of double-barrier devices, we have investigated and analyzed the effects of the relaxation time on electron transport properties in this kind of low dimensional structure. The results show that the relaxation time, which comes from the electron-phonon and electron-defect interactions,greatly affects the current-voltage curves,including the plateau-like gradient and hysteresis width of the current. 展开更多
关键词 NON-EQUILIBRIUM Wigner function electron transport
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