A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si heterojunction.When the diode is under forward bias,the elec...A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si heterojunction.When the diode is under forward bias,the electrons injected via the Si n-p- junction diffuse to and are confined in the β-FeSi 2 particles due to the band offset.The storage charge at the β-FeSi 2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p--Si near the Si junction,which prevents them from nonradiative recombination channels.This results in electroluminescence (EL) intensity from both Si and β-FeSi 2 quenching slowly up to room temperature.The temperature dependent ratio of EL intensity of β-FeSi 2 to Si indicates the loss of electron confinement following thermal excitation model.The conduction band offset between Si and β-FeSi 2 is determined to be about 0 2eV.展开更多
在日本东京大学CRIB次级束装置上,用长气体靶开展了22Na+α共振散射的厚靶实验研究。针对长气体靶实验中的两体运动学重构问题,提出了一套包括构建空间复杂几何关系、计算能量损失以及反应运动学的逐事件分析方法;对22Na+α共振散射的...在日本东京大学CRIB次级束装置上,用长气体靶开展了22Na+α共振散射的厚靶实验研究。针对长气体靶实验中的两体运动学重构问题,提出了一套包括构建空间复杂几何关系、计算能量损失以及反应运动学的逐事件分析方法;对22Na+α共振散射的实验数据进行了重构分析,得到了Ec.m.=4.2～5.4 Me V区间22Na(α,α)的激发函数,从实验的激发函数中观测到了复合核26Al 5个较为明显的共振峰。鉴于26Alα共振态的衰变模式比较复杂,本工作发现的26Al新共振态的能级性质有待进一步的理论分析。展开更多
文摘A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si heterojunction.When the diode is under forward bias,the electrons injected via the Si n-p- junction diffuse to and are confined in the β-FeSi 2 particles due to the band offset.The storage charge at the β-FeSi 2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p--Si near the Si junction,which prevents them from nonradiative recombination channels.This results in electroluminescence (EL) intensity from both Si and β-FeSi 2 quenching slowly up to room temperature.The temperature dependent ratio of EL intensity of β-FeSi 2 to Si indicates the loss of electron confinement following thermal excitation model.The conduction band offset between Si and β-FeSi 2 is determined to be about 0 2eV.
文摘在日本东京大学CRIB次级束装置上,用长气体靶开展了22Na+α共振散射的厚靶实验研究。针对长气体靶实验中的两体运动学重构问题,提出了一套包括构建空间复杂几何关系、计算能量损失以及反应运动学的逐事件分析方法;对22Na+α共振散射的实验数据进行了重构分析,得到了Ec.m.=4.2～5.4 Me V区间22Na(α,α)的激发函数,从实验的激发函数中观测到了复合核26Al 5个较为明显的共振峰。鉴于26Alα共振态的衰变模式比较复杂,本工作发现的26Al新共振态的能级性质有待进一步的理论分析。
