Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

基于提前分配路径的低时延片上路由器结构

该文针对片上网络提出一种基于提前分配路径的低时延片上路由器结构(PAPR)。新路由器采用提前路由计算和提前分配路径来缩短路由器流水线深度。提前路由计算为虚信道提前分配提供了可靠保障,即使在虚信道路径提前分配失败的情况下,也不影响分组在网络中的传输时延。该文提出基于缓存状态的仲裁算法BSTS(BufferStatus)综合考虑当前节点缓存信息和下游节点缓存信息,不但降低了分组等待时延,而且降低了缓存空闲的概率。仿真结果表明,新路由器能明显改善网络的时延和吞吐性能,相比采用滑动迭代轮询仲裁iSLIP(iterativeRound-Robin Matching with SLIP(Serial Line Interface Protocal))算法的经典虚信道路由器,网络平均端到端时延降低了24.5%,吞吐率提高了27.5%;与采用轮询迭代RRM(Round-Robin Matching)算法的经典虚信道路由器相比,平均端到端时延降低了39.2%,吞吐率提高了47.2%。路由器硬件开销和平均功耗分别增加仅为8.9%,5.9%。

Physical Properties of Si_(2)Ge and SiGe_(2) in Hexagonal Symmetry:First-Principles Calculations

We predict two novel group 14 element alloys Si_(2)Ge and SiGe_(2) in P6_(2)22 phase in this work through first-principles calculations.The structures,stability,elastic anisotropy,electronic and thermodynamic properties of these two proposed alloys are investigated systematically.The proposed P6_(2)22-Si_(2)Ge and P6_(2)22-SiGe_(2) have a hexagonal symmetry structure,and the phonon dispersion spectra and elastic constants indicate that these two alloys are dynamically and mechanically stable at ambient pressure.The elastic anisotropy properties of P6_(2)22-Si_(2)Ge and P6_(2)22-SiGe_(2) are examined elaborately by illustrating the surface constructions of Young’s modulus,the contour surfaces of shear modulus,and the directional dependence of Poisson’s ratio;the differences with their corresponding group 14 element allotropes P6_(2)22-Si_(3) and P6_(2)22-Ge_(3) are also discussed and compared.Moreover,the Debye temperature and sound velocities are analyzed to study the thermodynamic properties of the proposed P6_(2)22-Si_(2)Ge and P6_(2)22-SiGe_(2).

C2-Si:a Novel Silicon Allotrope in Monoclinic Phase

Based on density functional theory(DFT),a new silicon allotrope C2-Si is proposed in this work.The mechanical stability and dynamic stability of C2-Si are examined based on the elastic constants and phonon spectrum.According to the ratio of bulk modulus and shear modulus,C2-Si has ductility under ambient pressure;compared with Si_(64),Si_(96),I4/mmm and h-Si6,C2-Si is less brittle.Within the Heyd-Scuseria-Ernzerhof(HSE06)hybrid functional,C2-Si is an indirect narrow band gap semiconductor,and the band gap of C2-Si is only 0.716 eV,which is approximately two-thirds of c-Si.The ratios of the maximum and minimum values of the Young’s modulus,shear modulus and Poisson’s ratio in their 3D spatial distributions for C2-Si are determined to characterize the anisotropy.In addition,the anisotropy in different crystal planes is also investigated via 2D representations of the Young’s modulus,shear modulus,and Poisson’s ratio.Among more than ten silicon allotropes,C2-Si has the strongest absorption ability for visible light.