The design,manufacturing and DC and microwave characterization of high-power Schottky barrier In Al As/In Ga As back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameter...The design,manufacturing and DC and microwave characterization of high-power Schottky barrier In Al As/In Ga As back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameters operate at≥40 and 28 GHz,respectively,have the output RF power as high as 58 m W at a frequency of 20 GHz,the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness,and a photodiode dark current as low as 0.04 n A.We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in highspeed analog transmission lines with stringent requirements for phase noise.展开更多
The epitaxial growth of Ge on Si(111) covered with the 0.3 nm thick SiO2 film is studied by scanning tunneling microscopy. Nanoareas of bare Si in the SiO2 film are prepared by Ge deposition at a temperature in the ra...The epitaxial growth of Ge on Si(111) covered with the 0.3 nm thick SiO2 film is studied by scanning tunneling microscopy. Nanoareas of bare Si in the SiO2 film are prepared by Ge deposition at a temperature in the range of 570℃-650℃ due to the formation of volatile SiO and GeO molecules. The surface morphology of Ge layers grown further at 360℃-500℃ is composed of facets and large flat areas with the Ge(111)-c(2 × 8) reconstruction which is typical of unstrained Ge. Orientations of the facets, which depend on the growth temperature, are identified. The growth at 250℃-300℃ produces continuous epitaxial Ge layers on Si(111). A comparison of the surface morphology of Ge layers grown on bare and SiO2-film covered Si(111) surfaces shows a significantly lower Ge-Si intermixing in the latter case due to a reduction in the lattice strain. The found approach to reduce the strain suggests the opportunity of the thin continuous epitaxial Ge layer formation on Si(111).展开更多
基金supported by the Russian Science Foundation(grant number 19-72-30023)。
文摘The design,manufacturing and DC and microwave characterization of high-power Schottky barrier In Al As/In Ga As back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameters operate at≥40 and 28 GHz,respectively,have the output RF power as high as 58 m W at a frequency of 20 GHz,the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness,and a photodiode dark current as low as 0.04 n A.We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in highspeed analog transmission lines with stringent requirements for phase noise.
文摘The epitaxial growth of Ge on Si(111) covered with the 0.3 nm thick SiO2 film is studied by scanning tunneling microscopy. Nanoareas of bare Si in the SiO2 film are prepared by Ge deposition at a temperature in the range of 570℃-650℃ due to the formation of volatile SiO and GeO molecules. The surface morphology of Ge layers grown further at 360℃-500℃ is composed of facets and large flat areas with the Ge(111)-c(2 × 8) reconstruction which is typical of unstrained Ge. Orientations of the facets, which depend on the growth temperature, are identified. The growth at 250℃-300℃ produces continuous epitaxial Ge layers on Si(111). A comparison of the surface morphology of Ge layers grown on bare and SiO2-film covered Si(111) surfaces shows a significantly lower Ge-Si intermixing in the latter case due to a reduction in the lattice strain. The found approach to reduce the strain suggests the opportunity of the thin continuous epitaxial Ge layer formation on Si(111).
