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Resistance modulation in Ge2Sb2Te5
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作者 Jitendra K.Behera Wei Jie Wang +4 位作者 Xilin Zhou Shan Guan Wu Weikang Yang AShengyuan Robert ESimpson 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第15期171-177,共7页
Chalcogenide based phase change random access memory(PCRAM) holds great promise for high speed and large data storage applications.This memory is scalable,requires a low switching energy,has a high endurance,has fast ... Chalcogenide based phase change random access memory(PCRAM) holds great promise for high speed and large data storage applications.This memory is scalable,requires a low switching energy,has a high endurance,has fast switching speed,and is nonvolatile.However,decreasing the switching time whilst increasing the cycle endurance is a key challenge for this technology to replace dynamic random access memory.Here we demonstrate high speed and high endurance ultrafast transient switching in the SET state of a prototypical phase change memory cell.Volatile switching is modeled by electron-phonon and lattice scattering on short timescales and charge carrier excitation on long timescales.This volatile switching in phase change materials enables the design of hybrid memory modulators and ultrafast logic circuits. 展开更多
关键词 Phase change memory Transient resistance VOLATILE SCATTERING Charge carrier excitation Large endurance
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