For 193-nm lithography, water proves to be a suitable immersion fluid. ArF immersion offers the potential to extend conventional optical lithography to the 45-nm node and potentially to the 32-nm node. Additionally, w...For 193-nm lithography, water proves to be a suitable immersion fluid. ArF immersion offers the potential to extend conventional optical lithography to the 45-nm node and potentially to the 32-nm node. Additionally, with existing lenses, the immersion option offers the potential to increase the focus window with 50% and more, depending on actual NA and feature type. In this paper we discuss the results on imaging and overlay obtained with immersion. Using a 0.75 NA ArF projection lens,we have built a proto-type immersion scanner using TWINSCANTM technology. First experimental data on imaging demonstrated a large gain of depth of focus (DoF),while maintaining image contrast at high scan speed. For first pilot production with immersion, a 0.85 NA ArF lens will be used. The resolution capabilities of this system will support 65 nm node semiconductor devices with a DOF significantly larger than 0.5 um. Early imaging data of such a system confirms a significant increase in focus window.展开更多
In the semiconductor industry,the demand for more precise and accurate overlay metrology tools has increased because of the continued shrinking of feature sizes in integrated circuits.To achieve the required sub-nanom...In the semiconductor industry,the demand for more precise and accurate overlay metrology tools has increased because of the continued shrinking of feature sizes in integrated circuits.To achieve the required sub-nanometre precision,the current technology for overlay metrology has become complex and is reaching its limits.Herein,we present a dark-field digital holographic microscope using a simple two-element imaging lens with a high numerical aperture capable of imaging from the visible to near-infrared regions.This combination of high resolution and wavelength coverage was achieved by combining a simple imaging lens with a fast and accurate correction of non-isoplanatic aberrations.We present experimental results for overlay targets that demonstrate the capability of our computational aberration correction in the visible and near-infrared wavelength regimes.This wide-ranged-wavelength imaging system can advance semiconductor metrology.展开更多
Many applications of the extreme ultraviolet(XUV)radiation obtained by high-order harmonic generation(HHG)in gases require a small focus area in order to enable attosecond pulses to reach a high intensity.Here,high-or...Many applications of the extreme ultraviolet(XUV)radiation obtained by high-order harmonic generation(HHG)in gases require a small focus area in order to enable attosecond pulses to reach a high intensity.Here,high-order harmonics generated in Ar with a multiterawatt laser system in a loose focusing geometry are focused to a few micrometers using two toroidal mirrors in a Wolter configuration with a high demagnification factor.Using a knife-edge measurement technique,we determine the position and size of the XUV foci as a function of harmonic order.We show that the focus properties vary with harmonic order and the generation conditions.Simulations,based on a classical description of the harmonic dipole phase and assuming that the individual harmonics can be described as Gaussian beams,reproduce the experimental behavior.We discuss how the generation geometry affects the intensity and duration of the focused attosecond pulses.展开更多
文摘For 193-nm lithography, water proves to be a suitable immersion fluid. ArF immersion offers the potential to extend conventional optical lithography to the 45-nm node and potentially to the 32-nm node. Additionally, with existing lenses, the immersion option offers the potential to increase the focus window with 50% and more, depending on actual NA and feature type. In this paper we discuss the results on imaging and overlay obtained with immersion. Using a 0.75 NA ArF projection lens,we have built a proto-type immersion scanner using TWINSCANTM technology. First experimental data on imaging demonstrated a large gain of depth of focus (DoF),while maintaining image contrast at high scan speed. For first pilot production with immersion, a 0.85 NA ArF lens will be used. The resolution capabilities of this system will support 65 nm node semiconductor devices with a DOF significantly larger than 0.5 um. Early imaging data of such a system confirms a significant increase in focus window.
文摘In the semiconductor industry,the demand for more precise and accurate overlay metrology tools has increased because of the continued shrinking of feature sizes in integrated circuits.To achieve the required sub-nanometre precision,the current technology for overlay metrology has become complex and is reaching its limits.Herein,we present a dark-field digital holographic microscope using a simple two-element imaging lens with a high numerical aperture capable of imaging from the visible to near-infrared regions.This combination of high resolution and wavelength coverage was achieved by combining a simple imaging lens with a fast and accurate correction of non-isoplanatic aberrations.We present experimental results for overlay targets that demonstrate the capability of our computational aberration correction in the visible and near-infrared wavelength regimes.This wide-ranged-wavelength imaging system can advance semiconductor metrology.
基金support from the Swedish Research Council,the European Research Council(advanced grant QPAP)the Knut and Alice Wallenberg Foundation,and the Crafoord Foundation.The research leading to these results has received funding from LASERLAB-EUROPE(grant agreement no.654148,European Union’s Horizon 2020 research and innovation programme)+1 种基金S.M.acknowledges financial support from the COST Action CA18212-Molecular Dynamics in the GAS phase(MD-GAS)supported by COST(European Cooperation in Science and Technology).
文摘Many applications of the extreme ultraviolet(XUV)radiation obtained by high-order harmonic generation(HHG)in gases require a small focus area in order to enable attosecond pulses to reach a high intensity.Here,high-order harmonics generated in Ar with a multiterawatt laser system in a loose focusing geometry are focused to a few micrometers using two toroidal mirrors in a Wolter configuration with a high demagnification factor.Using a knife-edge measurement technique,we determine the position and size of the XUV foci as a function of harmonic order.We show that the focus properties vary with harmonic order and the generation conditions.Simulations,based on a classical description of the harmonic dipole phase and assuming that the individual harmonics can be described as Gaussian beams,reproduce the experimental behavior.We discuss how the generation geometry affects the intensity and duration of the focused attosecond pulses.
