InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and tran...InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed and tested to be efficient to tune the overall strain between tensile and compressive without degradation of interface and optical quality. The effect of the proposed methods is modeled by analytic functions.? Band structure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated.展开更多
Multiple quantum well spatial light modulators with 128×128 array in 38μm pitch are fabricated using two pproaches, one with an attachment of an optical substrate and another one without. These two fabrication p...Multiple quantum well spatial light modulators with 128×128 array in 38μm pitch are fabricated using two pproaches, one with an attachment of an optical substrate and another one without. These two fabrication processes are described and compared.展开更多
文摘InAs/GaSb type-II superlattce (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature and group-V soaking times were optimized with respect to interface and transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed and tested to be efficient to tune the overall strain between tensile and compressive without degradation of interface and optical quality. The effect of the proposed methods is modeled by analytic functions.? Band structure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated.
文摘Multiple quantum well spatial light modulators with 128×128 array in 38μm pitch are fabricated using two pproaches, one with an attachment of an optical substrate and another one without. These two fabrication processes are described and compared.
