The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy...The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon.展开更多
Resonance shifting due to refractive index changes is used quite often in terahertz sensing, but it does not show the advantages of substance identification of terahertz technology. Different from that approach, we ex...Resonance shifting due to refractive index changes is used quite often in terahertz sensing, but it does not show the advantages of substance identification of terahertz technology. Different from that approach, we explored the use of a cavity to enhance the sensitivity of terahertz sensing while retaining the original capability of substance identification. The defect mode of a one-dimensional photonic crystal cavity composed of periodic holes etched into a silicon wire wavegnide was investigated for this purpose. The resonance of the defect mode was designed to match one characteristic absorption frequency of the sample. Due to the high dependence of the defect mode transmission on the material loss, the transmission sensitivity to the quantity of target was amplified significantly. The detection of alactose was used as an example, which demonstrates steady detection with its thickness of a few microns.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61605079)
文摘The slip mechanism on the surface of silicon wafers under laser irradiation was studied by numerical simulations and experiments. Firstly, the slip was explained by an analysis of the generalized stacking fault energy and the associated restoring forces. Activation of unexpected {110} slip planes was predicted to be a surface phenomenon. Experimentally,{110} slip planes were activated by changing doping concentrations of wafers and laser parameters respectively. Slip planes were {110} when slipping started within several atomic layers under the surface and turned into {111} with deeper slip.The scale effect was shown to be an intrinsic property of silicon.
文摘Resonance shifting due to refractive index changes is used quite often in terahertz sensing, but it does not show the advantages of substance identification of terahertz technology. Different from that approach, we explored the use of a cavity to enhance the sensitivity of terahertz sensing while retaining the original capability of substance identification. The defect mode of a one-dimensional photonic crystal cavity composed of periodic holes etched into a silicon wire wavegnide was investigated for this purpose. The resonance of the defect mode was designed to match one characteristic absorption frequency of the sample. Due to the high dependence of the defect mode transmission on the material loss, the transmission sensitivity to the quantity of target was amplified significantly. The detection of alactose was used as an example, which demonstrates steady detection with its thickness of a few microns.
