紫外光辐照全氢聚硅氮烷制备超薄二氧化硅膜及其在有机晶体管和反相器中的应用（英文）

二氧化硅是一种常见且非常重要的介电材料,但是其传统的制备方法例如物理气相沉积,化学气相沉积等无法适应大规模生产以及有机电子工业.本论文介绍了一种简单的制备二氧化硅超薄膜的方法,即利用紫外光辐照全氢聚硅氮烷,使其转化为二氧化硅.这种方法所制备的二氧化硅超薄膜具有超平的表面以及非常低的漏电.此外,我们还将该二氧化硅超薄膜应用于有机晶体管和反相器电路中,这些器件均表现出良好的电学性能.这些结果表明该方法制备的二氧化硅超薄膜具有很好的实际应用前景.

Fabrication of flexible thin organic transistors by trace water assisted transfer method

The development of fabrication method for flexible thin organic electronic device is highly important for the flexible and wearable products. Herein, we develop a facile peel-off method to transfer organic thin film to various substrates. In this strategy, polyacrylonitrile （PAN） film can be easily peeled offwith trace water and further transferred to various substrates. Using PAN as supporting and dielectric layers, high performance flexible organic transistors are fabricated. Remarkably, the method uses only micro volume water as an assist to peel off PAN film, which reduces the risk of contamination by solvent and greatly contributes to the performance maintenance.

Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability, excellent electrical properties, mature preparation process, and good compatibility with organic semiconductors. However, most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum. In this paper, we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route, which possesses a low leakage current, high capacitance, and low surface roughness. The silica thin film can be produced in the condition of low temperature and atmospheric environment. To meet various demands, the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution. The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance. This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving, time-saving and easy to operate.

Tuning the aggregation structure and electrical property of 2.6-diphenyl-anthracene by the density of octadecyltrichlorosilane

The physical and chemical properties of organic semiconductors are closely related to their aggregation structure. Tuning of aggregation structure and electrical property is important for the application in organic electronics. In this study, a facile way to tune the aggregation structure and electrical property of 2.6-diphenyl-anthracene(DPA) is realized by using the octadecyltrichlorosilane(OTS) modification layer with different density which is fabricated by controlling reaction temperature and time.Compared with low density OTS, DPA forms larger grain size, less grain boundaries, and better molecular ordering on high density OTS surface. As a result, the charge transporting mobility of DPA film on high density OTS surface is about two orders of magnitude higher than that on low density OTS surface. The tunable aggregation structure and electrical property of DPA demonstrated here would be meaningful for the application of DPA in organic electronics.

蛋类膜-壳结构启发制备兼具高灵敏度和宽检测范围的应变传感

为了解决可拉伸应变传感器的灵敏度与检测范围(最大和最小可拉伸性)之间相互制约的问题.受蛋类膜-壳结构的启发,本文提出了一种构筑具有高灵敏度、宽可拉伸应变传感器的新策略,即基于柔性可拉伸的表面接枝聚吡咯膜(s-PPy)(类似于蛋膜)和脆性金膜(类似于蛋壳)制备器件.Au和s-PPy膜在电学和机械性能上产生相互协同作用.Au膜在拉伸应变下形成裂纹,有助于提高应变传感器的灵敏度并降低其检测极限,而s-PPy膜桥接Au膜裂纹以增加器件的可拉伸性,这一策略在应变传感器中从未使用过.表面接枝策略不仅增强界面附着力,而且使天然脆性的聚吡咯膜表现出优异的可拉伸性.在本论文中,依靠膜-壳互补结构的协同作用,应变传感器实现了超高灵敏度(超过10^(7)),宽拉伸范围(100%)以及超低检测极限(0.1%),这些性能指标将推动应变传感器领域的重大进步.而且,这种基于Au/s-PPy膜-壳结构的可拉伸应变传感器可应用于手指弯曲、手腕旋转、气流波动和声音振动等从微小变形到大范围变形的应变检测.以上结果表明基于Au/s-PPy膜-壳结构的可拉伸应变传感器具有超高性能和广阔的应用前景.