Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large...Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful.Here,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μm.Furthermore,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm wavelength.The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.展开更多
Mn-doped Cu3N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature. The incorporation of Mn can change the preferred growth orientation from Cu-rich plane （111） ...Mn-doped Cu3N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature. The incorporation of Mn can change the preferred growth orientation from Cu-rich plane （111） to N-rich plane （100） due to the improvement of nitridation of Cu. The shrinkage of the lattice and the X-ray photoelectron spectroscopy results reveal that Mn should replace Cu atoms in the lattice or be segregated in the grain boundaries. The thickness of Mn-doped film is smaller than that of the pure one due to the less physisorption of N species among the columnar grains. The mean grain size and the energy gap become larger with increasing Mn concentration to 2.2 at.% and then decrease when the concentration of Mn is higher than 2.2 at.%. Notably, weak doping of 1.5 at.% Mn successfully promotes the decomposed temperature by -50℃. According to the results of XRD and SEM for Mn- doped films annealed in vacuum, a possible decomposed mechanism with increasing the annealing temperature is proposed.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 62005139, and 12174212)Natural Science Foundation of Shandong Province (Grant No. ZR2019MF061)+7 种基金the support of Aalto University Doctoral SchoolWalter Ahlstram FoundationElektroniikkainsinoorien SaatioSahkoinsinooriliiton SaatioNokia FoundationFinnish Foundation for Technology Promotion (Tekniikan Edistamissaatio)Waldemar von Frenckell’s FoundationKansallis-Osake-Pankki Fund。
文摘Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been studied.Nevertheless,studying the optoelectronics properties and performance of such devices based on large-diameter wires is interesting and meaningful.Here,we successfully grew the micronsized indium antimonide(InSb) wires,and examined their nonlinear optical properties by Z-scan and I-scan(power-dependent) methods within the wavelength range of 0.8-2.8 μm.Furthermore,we demonstrated InSb micro wires(MWs) working as an effective and robust optical switch within 1-2.8 μm wavelength.The findings can open possibilities for research on more large-diameter MWs made from other semiconductor materials for photonic and electronic devices.
基金supported by the Natural Science Foundation of Shandong Province(Grant Nos.ZR2013EMQ006,ZR2011EMZ001,ZR2011EMQ011)the National Natural Science Foundation of China(Grant Nos.51272117,51172115,60907007)+3 种基金the Research Award Fund for Outstanding Young Scientists of Shandong Province(Grant No.BS2013CL040)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20123719110003)the Tackling Key Program of Science and Technology in Shandong Province(Grant No.2012GGX10218)the Application Foundation Research Program of Qingdao(Grant Nos.13-1-4-117-jch and14-2-4-29-jch)
文摘Mn-doped Cu3N films were deposited by cylindrical magnetron sputtering equipment on the common glass at room temperature. The incorporation of Mn can change the preferred growth orientation from Cu-rich plane （111） to N-rich plane （100） due to the improvement of nitridation of Cu. The shrinkage of the lattice and the X-ray photoelectron spectroscopy results reveal that Mn should replace Cu atoms in the lattice or be segregated in the grain boundaries. The thickness of Mn-doped film is smaller than that of the pure one due to the less physisorption of N species among the columnar grains. The mean grain size and the energy gap become larger with increasing Mn concentration to 2.2 at.% and then decrease when the concentration of Mn is higher than 2.2 at.%. Notably, weak doping of 1.5 at.% Mn successfully promotes the decomposed temperature by -50℃. According to the results of XRD and SEM for Mn- doped films annealed in vacuum, a possible decomposed mechanism with increasing the annealing temperature is proposed.
