Semiconductor Type Dependent Comparison of Electrical Characteristics of Pt/InP Structures Fabricated by Magnetron Sputtering Technique in the Range of 20-400 K

The paper describes how electrical properties of Pt/In P Schottky diode were affected by semiconductor type. We fabricated Pt/p-In P and Pt/n-In P Schottky diodes and measured electrical characteristics from 20 K to 400 K. Thicknesses of less than 30 nm of platinum were deposited on the two types of indium phosphide substrates using magnetron sputtering technique after the creation of Zn-Au ohmic back contact.We discussed basic diode parameters of idealiy factors, barrier heights and serries resistances of the two type of contacts. Additionly, unusual temperature characteristics of the the diodes were highlighted. These results were evaluated in terms of semiconductor type comparision of Pt/In P Schottky structures.

Relationship between fall risks and activities of daily living in older individuals

Objective:To investigate the relationship between fall risks and maintaining activities of daily living in individuals aged 65 and over.Methods:This study is cross-sectional.It was conducted with 233 individuals who were aged 65 and over in Family Health Centers located in the eastern part of Turkey between February and June 2018.Results:The mean older individuals’DENN Fall Risks Assessment Scale score was 11.73±7.13,and 62.2%of the participants were in the high-risk group.Barthel Index of Activities of Daily Living(ADL)mean score was 68.03±25.36,and 45.1%of the participants were in the moderately dependent group.There was a statistically significant,negative correlationship between Barthel Index of ADL score and age and DENN Fall Risks Assessment Scale score.In addition,there was a statistically significant,positive relationship between the DENN Fall Risks Assessment Scale score and age(p<0.01).Conclusions:This study found that level of dependency and fall risks increased with the increase in age.Effective global and multidisciplinary interventions are needed to decrease older individuals’dependency levels and fall risks today when the number of older individuals is increasing.

A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl2F2/O2 and H2/CH4

We report comparatively on fabrication of two-section ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode lasers. Gas mixtures of CCl2F2/O2 and H2/CH4 were used to form ridge-waveguide on the lasers with InP-based material structures. As known, chlorine- and hydro-carbon based gases are used to fabricate ridge-waveguide structures. Here, we show the difference between the structures obtained by using the both gas mixtures in which surface and sidewall structures as well as performance of the lasers were analysed using scanning electron microscopy. It is demonstrated that gas mixtures of CCl2F2/O2 highly deteriorated the etched structures although different flow rates, rf powers and base pressures were tried. We also show that the structures etched with H2/CH4 gas mixtures produced much better results that led to the successful fabrication of two-section devices with ridge-waveguide. The lasers fabricated using H2/CH4 were characterized using output power-current (P-I) and spectral results.