Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics,...Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃. The growth characteristics and films properties of PE-ALD Co using bis（η-methylcyclopentadienyl） Co（II） （Co（MeCp）2） was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt （II） （CoCp2） and cyclopentadienyl isopropyl acetamidinato-cobalt （Co（CpAMD））.展开更多
The integration of porous organo-silicate low-k materials has met a lot of technical challenges.One of the main issues is plasma-induced damage,occurring for all plasma steps involved during interconnects processing.I...The integration of porous organo-silicate low-k materials has met a lot of technical challenges.One of the main issues is plasma-induced damage,occurring for all plasma steps involved during interconnects processing.In the present paper,we focus on porous SiOCH low-k damage mitigation using cryogenic temperature so as to enable micro-capillary condensation.The aim is to protect the porous low-k from plasma-induced damage and keep the k-value of the material unchanged,in order to limit the RC delay of interconnexion levels while shrinking the microchip dimension.The cryogenic temperature is used to condense a gas inside the porous low-k material.Then,the etching process is performed at the temperature of condensation in order to keep the condensate trapped inside the material during the etching.In the first part of this work,the condensation properties of several gases are screened,leading to a down selection of five gases.Then,their stability into the porous structure is evaluated at different temperature.Four of them are used for plasma damage mitigation comparison.Damage mitigation is effective and shows negligible damage for one of the gases at-50℃.展开更多
基金supported by the Technology Innovation Program Industrial Strategic Technology Development Program(10035430)Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE,Korea.The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2
文摘Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃. The growth characteristics and films properties of PE-ALD Co using bis（η-methylcyclopentadienyl） Co（II） （Co（MeCp）2） was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt （II） （CoCp2） and cyclopentadienyl isopropyl acetamidinato-cobalt （Co（CpAMD））.
文摘The integration of porous organo-silicate low-k materials has met a lot of technical challenges.One of the main issues is plasma-induced damage,occurring for all plasma steps involved during interconnects processing.In the present paper,we focus on porous SiOCH low-k damage mitigation using cryogenic temperature so as to enable micro-capillary condensation.The aim is to protect the porous low-k from plasma-induced damage and keep the k-value of the material unchanged,in order to limit the RC delay of interconnexion levels while shrinking the microchip dimension.The cryogenic temperature is used to condense a gas inside the porous low-k material.Then,the etching process is performed at the temperature of condensation in order to keep the condensate trapped inside the material during the etching.In the first part of this work,the condensation properties of several gases are screened,leading to a down selection of five gases.Then,their stability into the porous structure is evaluated at different temperature.Four of them are used for plasma damage mitigation comparison.Damage mitigation is effective and shows negligible damage for one of the gases at-50℃.
