Author Correction: ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection

Correction to:Opto-Electronic Advances https://doi.org/10.29026/oea.2023.220154 published online 26 April 2023 After the publication of this article1,it was brought to our attention that calculations of the PeLEC device elec-troluminescent(EL)efficiency contained a mistake,leading to an inaccurate quantity value.The device’s maxim-um EL efficiency constitutes not‘~120 klm/W’but‘4.3 lm/W’instead.Correction details are listed below.

ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection

Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture.Here,we develop a perovskite electrochemical cell both for light emission and detection,where the active layer consists of a composite material made of halide perovskite microcrystals,polymer support matrix,and added mobile ions.The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition,emitting light at the wavelength of 523 nm,yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 4.3 lm/W.The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40%lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates.Moreover,the device operates as a photodetector with a sensitivity up to 0.75 A/W,specific detectivity of 8.56×1011 Jones,and linear dynamic range of 48 dB.The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50μm.

All-optical generation of static electric field in a single metal-semiconductor nanoantenna

Electric field is a powerful instrument in nanoscale engineering,providing wide functionalities for control in various optical and solid-state nanodevices.The development of a single optically resonant nanostructure operating with a charge-induced electrical field is challenging,but it could be extremely useful for novel nanophotonic horizons.Here,we show a resonant metal-semiconductor nanostructure with a static electric field created at the interface between its components by charge carriers generated via femtosecond laser irradiation.We study this field experimentally,probing it by second-harmonic generation signal,which,in our system,is time-dependent and has a non-quadratic signal/excitation power dependence.The developed numerical models reveal the influence of the optically induced static electric field on the second harmonic generation signal.We also show how metal work function and silicon surface defect density for different charge carrier concentrations affect the formation of this field.We estimate the value of optically-generated static electric field in this nanoantenna to achieve≈10^(8)V/m.These findings pave the way for the creation of nanoantenna-based optical memory,programmable logic and neuromorphic devices.

Quantum-dot microlasers based on whispering gallery mode resonators

The subject of this paper is microlasers with the emission spectra determined by the whispering gallery modes.Owing to the total internal reflection of light on the sidewalls,a high Q-factor is achieved until the diameter is comparable to the wavelength.The light emission predominantly occurs in the plane of the structure,which facilitates the microlaser integration with other elements.We focus on microdisk lasers with various types of the In(Ga)As quantum dots(QDs).Deep localization of charge carriers in spatilly separated regions suppresses the lateral diffusion and makes it possible to overcome the undesirable effect of non-adiative recombination in deep mesas.Thus,using conventional epitaxial structures and relatively simple post-growth processing methods,it is possible to realize small microlasers capable of operating without temperature stabilization at elevated temperatures.The low sensitivity of QDs to epitaxial and manufacturing defects allows fabricating microlasers using IIV heterostructures grown on silicon.