期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
ELECTRONIC STRUCTURE OF CHALCOGENIDE COMPOUNDS
1
作者 LU Yanwu WANG Dingsheng RONG Ailun 《Chinese Physics Letters》 SCIE CAS CSCD 1990年第2期75-78,共4页
Empirical linear combination of atomic orbitals(LCAO)calculations are performed to investigate the electronic structure of Sb_(2)Se_(3),Sb_(2)Te_(3),In_(2)Se_(3) and In_(2)Te_(3).The bands of bonding p states are over... Empirical linear combination of atomic orbitals(LCAO)calculations are performed to investigate the electronic structure of Sb_(2)Se_(3),Sb_(2)Te_(3),In_(2)Se_(3) and In_(2)Te_(3).The bands of bonding p states are overlapped with the bands of lone pair states in these materials.The absorption edges of these materials correspond to indirect gap,and the calculation agrees with experimental values. 展开更多
关键词 MATERIALS BANDS STATES
下载PDF
Structure characteristics and piezoresistive effect of nc-Si:H films 被引量:1
2
作者 何宇亮 武旭辉 +2 位作者 林鸿溢 王珩 李冲 《Chinese Science Bulletin》 SCIE EI CAS 1995年第20期1684-1687,共4页
In recent years, using the ultra-vacuum PECVD system, we have successfully prepared the nano-crystalline silicon films (nc-Si:H). The nc-Si:H films are composed of a mass of fine microcrystallites with the mean grain ... In recent years, using the ultra-vacuum PECVD system, we have successfully prepared the nano-crystalline silicon films (nc-Si:H). The nc-Si:H films are composed of a mass of fine microcrystallites with the mean grain size of 3—5nm and the volume crystalline fraction of X_c=(50±5)%. The spacing between grains is constituted by a great number of interfaces, as shown in fig. 1. From the figure, it is estimated that the thickness of the interfaces is 1—4 atomic layers (≤1nm) and the volume fraction of the interfaces is about 40%. It is obvious that the microstructure of the nc-Si:H films is quite diffe 展开更多
关键词 NANO-CRYSTALLINE SILICON FILM PIEZORESISTIVE effect.
原文传递
Fractal characteristics of surface morphology for hydrogenated silicon films
3
作者 何宇亮 万明芳 +2 位作者 袁凯华 戎霭伦 魏希文 《Chinese Science Bulletin》 SCIE EI CAS 1996年第19期1659-1665,共7页
Hydrogenated nanocrystalline silicon films (nc-Si:H) are a developing novel man-made functional semiconductor material in recent years. Their strange microstructure and physical properties of nc-Si:H films are attract... Hydrogenated nanocrystalline silicon films (nc-Si:H) are a developing novel man-made functional semiconductor material in recent years. Their strange microstructure and physical properties of nc-Si:H films are attracting our attention. We have used the conventional structure analysis procedures, such as X-ray diffraction pattern, Raman scattering spectrum, high resolution transmission electron microscopy (HREM), and the scanning tunnelling microscope (STM), to analyze their microstructure. Since Mandelbrot proposed the fractal theory in 1982, it has become a quantitatively characterizing means to distinguish the microstructure morphology of materials. Recently, the fractal 展开更多
关键词 micro-crystalline SILICON FILMS NANO-CRYSTALLINE SILICON FILMS FRACTAL morphology.
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部