Nonreciprocal transport in the superconducting state of the chiral crystal NbGe_(2)

Due to the lack of inversion,mirror or other roto-inversion symmetries,chiral crystals possess a well-defined handedness which,when combined with time-reversal symmetry breaking from the application of magnetic fields,can give rise to directional dichroism of the electrical transport phenomena via the magnetochiral anisotropy.In this study,we investigate the nonreciprocal magneto-transport in microdevices of NbGe_(2),a superconductor with structural chirality.A giant nonreciprocal signal from vortex motions is observed during the superconducting transition,with the ratio of nonreciprocal resistance to the normal resistanceγreaching 6×10^(5)T^(-1)·A^(-1).Interestingly,the intensity can be adjusted and even sign-reversed by varying the current,the temperature,and the crystalline orientation.Our findings illustrate intricate vortex dynamics and offer ways of manipulation on the rectification effect in superconductors with structural chirality.

Linear dichroism transition and polarization-sensitive photodetector of quasi-one-dimensional palladium bromide

Perpendicular optical reversal of the linear dichroism transition has promising applications in polarization-sensitive optoelectronic devices. We perform a systematical study on the in-plane optical anisotropy of quasi-one-dimensional PdBr_(2) by using combined measurements of the angle-resolved polarized Raman spectroscopy(ARPRS) and anisotropic optical absorption spectrum. The analyses of ARPRS data validate the anisotropic Raman properties of the PdBr_(2) flake.And anisotropic optical absorption spectrum of PdBr_(2) nanoflake demonstrates distinct optical linear dichroism reversal. Photodetector constructed by PdBr_(2) nanowire exhibits high responsivity of 747 A·W^(-1) and specific detectivity of 5.8×10^(12) Jones. And the photodetector demonstrates prominent polarization-sensitive photoresponsivity under 405-nm light irradiation with large photocurrent anisotropy ratio of 1.56, which is superior to those of most of previously reported quasi-one-dimensional counterparts. Our study offers fundamental insights into the strong optical anisotropy exhibited by PdBr_(2), establishing it as a promising candidate for miniaturization and integration trends of polarization-related applications.

Pressure-induced magnetic phase and structural transition in SmSb_(2)

Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb_(2),here we present a high-pressure study of an isostructural antiferromagnetic(AFM) SmSb_(2) through electrical transport and synchrotron x-ray diffraction measurements.At P_(C)~2.5 GPa,we found a pressure-induced magnetic phase transition accompanied by a Cmca→P4/nmm structural phase transition.In the pristine AFM phase below P_(C),the AFM transition temperature of SmSb_(2) is insensitive to pressure;in the emergent magnetic phase above P_(C),however,the magnetic critical temperature increases rapidly with increasing pressure.In addition,at ambient pressure,the magnetoresistivity(MR) of SmSb_(2) increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2 K.With increasing pressure above P_(C),the MR behavior remains similar to that observed at ambient pressure,both in terms of temperature-and field-dependent MR.This leads us to argue an AFM-like state for SmSb_(2) above P_(C).Within the investigated pressure of up to 45.3 GPa and the temperature of down to 1.8 K,we found no signature of superconductivity in SmSb_(2).

Linear magnetoresistance and structural distortion in layered SrCu_(4-x)P_(2) single crystals

We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.

Crystal growth, magnetic and electrical transport properties of the kagome magnet RCr_6Ge_6(R= Gd–Tm)

Kagome magnets have attracted considerable research attention due to the interplay between topology,magnetism and electronic correlations.In this study we report single-crystal synthesis of a series of the kagome magnets.RCr_6Ge_6(R=Gd-Tm) that possess defect-free Cr kagome lattices and systematically study their magnetic and electrical transport properties.The transition from a canted ferrimagnetic to a paramagnetic state in GdCr_6Ge_6,TbCr_6Ge_6,DyCr_6Ge_6,HoCr_6Ge_6,ErCr_6Ge_6 and TmCr_6Ge_6 occurs at 11.3 K,10.8 K,4.3 K,2.5 K,3.3 K and below 2 K,respectively,due to R-R interactions within the compounds.Magnetization measurements reveal highly anisotropic magnetism with canted magnetic moments in these compounds.In electrical transport,both negative and positive magnetoresistances at different magnetic fields and temperatures have been observed due to the competition between different scattering mechanisms.This work enriches our understanding of the Cr-based kagome magnets and paves the way to search for possible topological responses in this family.

Observation of Giant Topological Hall Effect in Room-Temperature Ferromagnet Cr_(0.82)Te

Novel magnetic materials with non-trivial magnetic structures have led to exotic magnetic transport properties and significantly promoted the development of spintronics in recent years.Among them is the Crx Tey family,the magnetism of which can persist above room temperature,thus providing an ideal system for potential spintronic applications.Here we report the synthesis of a new compound,Cr_(0.82)Te,which demonstrates a record-high topological Hall effect at room temperature in this family.Cr_(0.82)Te displays soft ferromagnetism below the Curie temperature of 340 K.The magnetic measurement shows an obvious magneto-crystalline anisotropy with the easy axis located in the ab plane.The anomalous Hall effect can be well explained by a dominating skew scattering mechanism.Intriguing,after removing the normal Hall effect and anomalous Hall effect,a topological Hall effect can be observed up to 300 K and reaches up to 1.14μΩ·cm at 10 K,which is superior to most topological magnetic structural materials.This giant topological Hall effect possibly originates from the noncoplanar spin configuration during the spin flop process.Our work extends a new Cr_(x)Te_(y) system with topological non-trivial magnetic structure and broad prospects for spintronics applications in the future.

Planar Hall Effect in the Charge-Density-Wave Bi_(2)Rh_(3)Se_(2)

We systematically investigate in-plane transport properties of ternary chalcogenide Bi2Rh3Se2. Upon rotating the magnetic field within the plane of the sample, one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance, and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect (PHE). In addition, anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in Bi_(2)Rh_(3)Se_(2). The finding not only provides another platform for understanding the mechanism of PHE, but could also be beneficial for future planar Hall sensors based on two-dimensional materials.

Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression

van der Waals(vdW)semiconductors have gained significant attention due to their unique physical properties and promising applications,which are embedded within distinct crystallographic symmetries.Here,we report a pressure-induced crystallineamorphization-recrystallization transition under compression in binary vdW semiconductor SiP.Upon compression to 52 GPa,bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase,ultimately to recrystallized phase.By employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques,we reveal that the recrystallized Si P hosts a tetragonal structure(space group I4mm)and further transforms partially into a cubic phase(space group Fm3m).Consistently,electrical transport and alternating-current magnetic susceptibility measurements indicate the presence of three superconducting phases,which are embedded in separate crystallographic symmetries—the amorphous,tetragonal,and cubic structures.Furthermore,a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during decompression.Our findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor SiP.These results not only offer a new platform to explore the transformation between different structures and functionalities,but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.