Circulating tumor DNA and its role in detection, prognosis and therapeutics of hepatocellular carcinoma

Hepatocellular carcinoma(HCC) is considered the fifth most prevalent cancer among all types of cancers and has the third most morbidity value. It has the most frequent duplication time and a high recurrence rate. Recently, the most unique technique used is liquid biopsies, which carry many markers;the most prominent is circulating tumor DNA(ctDNA). Varied methods are used to investigate ctDNA, including various forms of polymerase chain reaction(PCR) [emulsion PCR(ePCR), digital PCR(dPCR), and bead, emulsion, amplification, magnetic(BEAMing) PCR]. Hence ctDNA is being recognized as a potential biomarker that permits early cancer detection,treatment monitoring, and predictive data on tumor burden are subjective to therapy or surgery. Numerous ctDNA biomarkers have been investigated based on their alterations such as 1) single nucleotide variations(either insertion or deletion of a nucleotide) markers including TP53, KRAS, and CCND1;2) copy number variations which include markers such as CDK6, EFGR, MYC and BRAF;3) DNA methylation(RASSF1A, SEPT9, KMT2C and CCNA2);4) homozygous mutation includes ctDNA markers as CDKN2A, AXIN1;and 5) gain or loss of function of the genes, particularly for HCC. Various researchers have conducted many studies and gotten fruitful results.Still, there are some drawbacks to ctDNA namely low quantity, fragment heterogeneity, less stability, limited mutant copies and standards, and differential sensitivity. However, plenty of investigations demonstrate ctDNA's significance as a polyvalent biomarker for cancer and can be viewed as a future diagnostic, prognostic and therapeutic agent. This article overviews many conditions in genetic changes linked to the onset and development of HCC, such as dysregulated signaling pathways, somatic mutations, single-nucleotide polymorphisms, and genomic instability. Additionally, efforts are also made to develop treatments for HCC that are molecularly targeted and to unravel some of the genetic pathways that facilitate its early identification.

Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites

We report a novel Mn-Co-Ni-O(MCN)nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene.With an increase of graphene content,the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type.The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN,neutralizing holes in the MCN nanoparticles.XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states.Unlike traditional semiconductor devices,electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN.The new composite film demonstrates inherent flexibility,high mobility,short carrier lifetime,and high carrier concentration.This work is useful not only in manufacturing flexible transistors,FETs,and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.

Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites

We report a novel Mn-Co-Ni-O(MCN)nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene.With an increase of graphene content,the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type.The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN,neutralizing holes in the MCN nanoparticles.XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states.Unlike traditional semiconductor devices,electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN.The new composite film demonstrates inherent flexibility,high mobility,short carrier lifetime,and high carrier concentration.This work is useful not only in manufacturing flexible transistors,FETs,and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.