Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully...Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.展开更多
Convergence of high-performance silicon photonics and electronics,monolithically integrated in state-of-the-art CMOS platforms,is the holy grail for enabling the ultimate efficiencies,performance,and scaling of electr...Convergence of high-performance silicon photonics and electronics,monolithically integrated in state-of-the-art CMOS platforms,is the holy grail for enabling the ultimate efficiencies,performance,and scaling of electronicphotonic systems-on-chip.It requires the emergence of platforms that combine state-of-the-art RF transistors with optimized silicon photonics,and a generation of photonic device technology with ultralow energies,increased operating spectrum,and the elimination of power-hungry thermal tuning.In this paper,in a co-optimized monolithic electronics-photonics platform(GlobalFoundries 45 CLO),we turn the metal-oxide-semiconductor(MOS) field-effect transistor’s basic structure into a novel,highly efficient MOS capacitor ring modulator.It has the smallest ring cavity(1.5 μm radius),largest corresponding spur-free free spectral range(FSR=8.5 THz),and record 30 GHz/V shift efficiency in the O-band among silicon modulators demonstrated to date.With 1 V_(pp) RF drive,we show an open optical eye while electro-optically tuning the modulator to track over 400 pm(69 GHz) change in the laser wavelength(using 2.5 V_(DC) range).A 90 GHz maximum electro-optic resonance shift is demonstrated with under 40 nW of power,providing a strong nonthermal tuning mechanism in a CMOS photonics platform.The modulator has a separately optimized body layer but shares the gate device layer and the gate oxide with 45 nm transistors,while meeting all CMOS manufacturability design rules.This type of convergent evolution of electronics and photonics may be the future of platforms for high-performance systemson-chip.展开更多
文摘Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered.
文摘Convergence of high-performance silicon photonics and electronics,monolithically integrated in state-of-the-art CMOS platforms,is the holy grail for enabling the ultimate efficiencies,performance,and scaling of electronicphotonic systems-on-chip.It requires the emergence of platforms that combine state-of-the-art RF transistors with optimized silicon photonics,and a generation of photonic device technology with ultralow energies,increased operating spectrum,and the elimination of power-hungry thermal tuning.In this paper,in a co-optimized monolithic electronics-photonics platform(GlobalFoundries 45 CLO),we turn the metal-oxide-semiconductor(MOS) field-effect transistor’s basic structure into a novel,highly efficient MOS capacitor ring modulator.It has the smallest ring cavity(1.5 μm radius),largest corresponding spur-free free spectral range(FSR=8.5 THz),and record 30 GHz/V shift efficiency in the O-band among silicon modulators demonstrated to date.With 1 V_(pp) RF drive,we show an open optical eye while electro-optically tuning the modulator to track over 400 pm(69 GHz) change in the laser wavelength(using 2.5 V_(DC) range).A 90 GHz maximum electro-optic resonance shift is demonstrated with under 40 nW of power,providing a strong nonthermal tuning mechanism in a CMOS photonics platform.The modulator has a separately optimized body layer but shares the gate device layer and the gate oxide with 45 nm transistors,while meeting all CMOS manufacturability design rules.This type of convergent evolution of electronics and photonics may be the future of platforms for high-performance systemson-chip.
