Structure of V_2O_5-P_2O_5-Sb_2O_3-Bi_2O_3 glass

The structure ofV2O5-P2O5-Sb2O3-Bi2O3glass and its state of crystallization were studied by means of infrared spectroscopy and X-ray diffraction analysis. The results indicate that, in this glass, V and P exist mainly in the form of a single-stranded linear （VO3）n and an isolated （PO4） tetrahedral with no double bond. Partial V and P are connected through O, forming an amorphous structure of layered vana- dium phosphate. Trivalent Sb3＋ and Bi3＋ open the V=O bond and appear in interlayers, so a weak three-dimensional structure is connected successfully. Along with the substitution of Sb203 for partial V205 or that of P205 for partial V205, the network structure of the glass is rein- forced, and the crystallization is reduced.

Thermoelectric Performances of Free-Standing Polythiophene and Poly（3-Methylthiophene） Nanofilms

Thermoelectric performances of free-standing polythiophene （PT） and poly（3-methylthiophene） （PMeT） nanofilms with high tensile strength electrosynthesized from boron trifluoride diethyl etherate （BFEE） are systematically investigated. They display decent electric conductivity （47 and 73S.cm^-1）, high Seebeck coefficient （130 and 76μV.K^-1） and low thermal conductivity （0.17 and 0.15 W.m^-1.K^-1） at room temperature. Their figure of merit can reach 3.0 × 10^-2 at 250K, higher than that of many other conducting polymers. The decrease of charge carrier concentration resulting from volatile and water-sensitive dopants from BFEE leads to the decrease of electrical conductivity but a substantial increase of the Seebeck coet^cient, making their figure-of-merit values maintained at more than 10-2 even after prolonged storage （two months）. Moreover, free-standing PT and PMeT exhibit much better thermoelectric performances than those in pressed pellets due to the good arrangement of the polymer chains and preferably oriented structure in films. It therefore provides a way to improve the thermo- electric performances of conducting polymers by controlling regularity of the extended conjugated chain structure and/or the chain packing to achieve high charge mobility.

Analytical transient phase change heat transfer model of wearable electronics with a thermal protection substrate

As thermal protection substrates for wearable electronics,functional soft composites made of polymer materials embedded with phase change materials and metal layers demonstrate unique capabilities for the thermal protection of human skin.Here,we develop an analytical transient phase change heat transfer model to investigate the thermal performance of a wearable electronic device with a thermal protection substrate.The model is validated by experiments and the finite element analysis(FEA).The effects of the substrate structure size and heat source power input on the temperature management efficiency are investigated systematically and comprehensively.The results show that the objective of thermal management for wearable electronics is achieved by the following thermal protection mechanism.The metal thin film helps to dissipate heat along the in-plane direction by reconfiguring the direction of heat flow,while the phase change material assimilates excessive heat.These results will not only promote the fundamental understanding of the thermal properties of wearable electronics incorporating thermal protection substrates,but also facilitate the rational design of thermal protection substrates for wearable electronics.

Highly efficient quantum dot light-emitting diodes with the utilization of an organic emission layer

The relative balance of electron and hole injection is crucial for the achievement of highly efficient quantum dot(QD)lightemitting diodes(QLEDs).Here,an inverted red QLED with the utilization of an organic emitting layer(EML)was obtained,exhibiting peak current efficiency(CE)and external quantum efficiency(EQE)of 25.63 cd/A and 23.20%,respectively.In the proposed device,the organic EML,which is a blend of fac-tris(2-phenylpyridine)iridium(Ir(ppy)_(3))and 4,4’-bis(N-carbazolyl)-1,1’-biphenyl(CBP),works as an exciton harvester to capture the leaked electrons from QD layer and the injected holes from hole transporting layer(HTL),then affording energy transfer from organic EML to the adjacent QD layer so that the emission of QD is enhanced significantly.At the same time,according to the results of hole-only and electron-only devices,the insertion of organic EML promotes the hole injection,and eliminates excess electrons from QD to HTL,thus leading to a better match of hole and electron injection in the device.On the basis of the above benefits,the optimal QLED with a 10 nm organic EML offered~2-fold improvements of CE and EQE,respectively,relative to the control device.Furthermore,a better operational lifetime of QLEDs based on the organic EML was achieved.

High-resolution, full-color quantum dot light-emitting diode display fabricated via photolithography approach

Displays play an extremely important role in modern information society,which creates a never-ending demand for the new and better products and technologies.The latest requirements for novel display technologies focus on high resolution and high color gamut.Among emerging technologies that include organic light-emitting diode(OL ED),micro light-emiting diode(micro-LED),quantum dot light-emitting diode(QLED),laser display,holographic display and others,QLED is promising owing to its intrinsic high color gamut and the possibility to achieve high resolution with photolithography approach.However,previously demonstrated photolthography techniques suffer from reduced device performance and color Impurities in subpixels from the process.In this study,we demonstrated a sacrificial layer assisted patterming(SLAP)approach,which can be applied in conjunction with photolithography to fabricate high-resolution,full-colo quantum dot(QD)patterns.In this approach,the negative photoresist(PR)and sacrificial layer(SL)were uilized to determine the pixels for QD deposition,while at the same time the SL helps protect the QD layer and keep it intact(named PR-SL approach).To prove this method's viability for QLED display manufacture,a 500-ppi,full-color passive matrix(PM)-QLED prototype was fabricated via this process.Results show that there were no color impurities in the subpixels,and the PM-QL ED has a high color gamut of 114%National Television Standards Committee(NTSC).To the best of our knowledge,this is the first ull-olor QLED prototype with such a high resolution.We anticipate that this innovative patteming technique will open a new horizon for future display technologies and may lead to a disruptive and innovative change in display industry.

Large-area and highly uniform carbon nanotube film for nigh-performance thin film transistors

Carbon nanotube thin film transistors （CNT-TFTs） are a potential TFT technology for future high-performance macroelectronics. Practical application of CNT-TFTs requires the production of large-area, highly uniform, density-controllable, repeatable, and high-throughput CNT thin films. In this stud35 CNT films were fabricated on 4-inch Si wafers and 2.5th generation （G2.5） backplane glasses （370 mm×470 ram） by dip coating using a chloroform-dispersed high-purity semiconducting CNT solution. The CNT density was controlled by the solution concentration and coating times, but was almost independent of the substrate lifting speed （1-450 mm.min-1）, which enables high-throughput CNT thin film production. We developed an image processing software to efficiently characterize the density and uniformity of the large-area CNT films. Using the software, we confirmed that the CNT films are highly uniform with coefficients of variance （Cv） 〈 10% on 4-inch Si wafers and - 13.8% on G2.5 backplane glasses. High-performance CNT-TFTs with a mobility of 45-55 cm2-V-l.s-1 were obtained using the fabricated CNT films with a high-performance uniformity （Cv =11%-13%） on a 4-inch wafer. To our knowledge, this is the first fabrication and detailed characterization of such large-area, high-purity, semiconducting CNT films for TFT applications, which is a significant step toward manufacturing CNT-TFTs.

Ultraviolet/ozone and oxygen plasma treatments for improving the contact of carbon nanotube thin film transistors

Carbon nanotube thin film transistor(CNT-TFT) is an emerging technology for future macroelectronics,such as chemical and biological sensors,optical detectors,and the backplane driving circuits for flat panel displays.The mostly reported fabrication method of CNT-TFT is a lift-off based photolithography process.In such fabrication process,photoresist(PR) residue contaminates the interface of tube-metal contact and deteriorates the device performance.In this paper,ultraviolet ozone(UVO) and oxygen plasma treatments were employed to remove the PR contamination.Through our well-designed experiments,the UVO treatment is confirmed an effective way of cleaning contamination at the tube-metal interface,while oxygen plasma treatment is too reactive and hard to control,which is not appropriate for CNT-TFTs.It is determined that 2–6 min UVO treatment is the preferred window,and the best optimized treatment time is 4 min,which leads to 15% enhancement of device performance.

Flexoelectric-effect-based light waveguide liquid crystal display for transparent display

We report a light waveguide liquid crystal display(LCD) based on the flexoelectric effect. The display consists of two parallel flat substrates with a layer of flexoelectric liquid crystal sandwiched between them. A light-emitting diode(LED) is installed on the edge of the display and the produced light is coupled into the display. When no voltage is applied, the liquid crystal is uniformly aligned and is transparent. The incident light propagates through the display by total internal reflection at the interface between the substrate and air, and no light comes out of the viewing side of the display. The display appears transparent. When a voltage is applied, the liquid crystal is switched to a micrometer-sized polydomain state due to flexoelectric interaction and becomes scattering. The incident light is deflected from the waveguide mode and comes out of the viewing side of the display. We achieved thin-film-transistor active matrix compatible driving voltage by doping liquid crystal dimers with large flexoelectric coefficients. The light waveguide LCD does not use polarizers as in conventional LCDs. It has an ultrahigh transmittance near 90% in the voltage-off state. It is very suitable for transparent display, which can be used for head-up display and augmented reality display.

Influence of synthetic temperature and heating time on the luminescence behavior of M_5(PO_4)_3Cl:Eu^(2+),Mn^(2+)(M=Ca, Sr) phosphors

To further understand the energy loss mechanism of the ＂charge transfer process＂ that was proposed in our previous work on Eu^2＋-Mn^2＋ co-doped phosphors, the influence of synthetic temperature and heating time on the photoluminescence（PL） behavior of M5（PO4）3Cl：Eu^2＋,Mn^2＋（M=Ca, Sr） phosphors was investigated by analyzing their PL spectra and decay curves. For the Ca phase, an increase in the synthetic temperature resulted in an increase in the loss from the ＂charge transfer process＂ since more Eu^2＋ ions were involved in the Eu^2＋-Mn^2＋ clusters. This was contrary to the thermodynamic expectation. To solve this contradiction, we proposed that the formation of Eu^2＋-Mn^2＋ clusters was kinetically blocked at lower synthetic temperatures. With an increase in heating time for the phosphors synthesized at lower temperature（such as 1100 ℃） the PL intensity decreased, which supported the above assertion.

Enhanced efficiency of top-emission InP-based green quantum dot light-emitting diodes with optimized angular distribution

High resolution and wide color gamut are two key requirements for novel display technologies. Owing to the distinguishing advantages over conventional displays, such as intrinsic wide color gamut and the possibility to achieve high resolution, quantum dot light-emitting diodes (QLED) have drawn considerable attention in recent years. On the other hand, indium phosphide quantum dots (InP QDs) have shown a great potential as a replacement for cadmium selenide (CdSe) QDs in display applications due to the inherent toxicity of cadmium-based QDs. In this study, we investigate a top-emission InP-based green QLED with optimized angular distribution. By adjusting the electrical and optical architecture, the device exhibits improved properties with a maximum current efficiency of 30.1 cd/A and a narrowed full width at half maxima (FWHM)of 31 nm, which are the best results ever reported to our knowledge.

Flexible radio-frequency micro electro-mechanical switch towards the applications of satellite communications

This paper presents a flexible radio-frequency microelectromechanical system(RF MEMS)switch integrated on cyclo-olefin polymer(COP)substrate using a modified surface MEMS processing technology,which could be used in the 17-19 GHz frequency band of satellite communication.Through systematic simulation analysis,it is found that flexible RF MEMS switch can achieve certain bending radius by miniaturizing the electronic dimension,without degrading the RF performance.It is demonstrated that the RF characteristics of flexible RF MEMS switch with special anchor structural design,fabricated by modified surface MEMS processing,are not sensitive to bending deformation under the curvature of 0 mm^(-1),0.05 mm^(-1),0.10 mm^(-1).Furthermore,the range of bending curvature which will affect the RF characteristics is given through systematic simulation.The flexible RF MEMS switch with high process compatibility and stable RF performance is believed to be promising candidates for future microwave communications and other consumer electronics.