We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO_(2)/p−Si substrates by rf magnetron sputtering.The GZO T...We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO_(2)/p−Si substrates by rf magnetron sputtering.The GZO TFTs show a mobility of 1.76 cm2/V⋅s,an on/off ratio of 1.0×10^(6),and a threshold voltage of 35 V.The time−dependent instability of the TFT is studied.The VTH shifts negatively.In addition,the device shows a decrease of the on/off ratio,mainly due to the increase of the off-current.The mechanisms of instability are discussed.展开更多
In this study,indium oxide（In2O3） thin-film transistors（TFTs） are fabricated by two kinds of low temperature solution-processed technologies（Ta ≤ 300℃）,i.e.,water-based（DIW-based） process and alkoxide-based...In this study,indium oxide（In2O3） thin-film transistors（TFTs） are fabricated by two kinds of low temperature solution-processed technologies（Ta ≤ 300℃）,i.e.,water-based（DIW-based） process and alkoxide-based（2-ME-based）process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility（μsat） and a negative shift in the threshold voltage（VTH）.The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si：H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 50972007the Beijing Municipal Natural Science Foundation under Grant No 4092035+2 种基金the National Basic Research Program of China under Grant No 2011CB932703the National Science Fund for Distinguished Young Scholars under Grant No 60825407the Special Items Fund of the Beijing Municipal Commission of Education,and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics.
文摘We report on the fabrication and electrical characteristics of Ga-doped ZnO thin film transistors(TFTs).Low Ga-doped(0.7wt%)ZnO thin films were deposited on SiO_(2)/p−Si substrates by rf magnetron sputtering.The GZO TFTs show a mobility of 1.76 cm2/V⋅s,an on/off ratio of 1.0×10^(6),and a threshold voltage of 35 V.The time−dependent instability of the TFT is studied.The VTH shifts negatively.In addition,the device shows a decrease of the on/off ratio,mainly due to the increase of the off-current.The mechanisms of instability are discussed.
基金Project supported by the National Natural Science Foundation of China(Grant No.61675024)the National Basic Research Program of China(Grant No.2014CB643600)
文摘In this study,indium oxide（In2O3） thin-film transistors（TFTs） are fabricated by two kinds of low temperature solution-processed technologies（Ta ≤ 300℃）,i.e.,water-based（DIW-based） process and alkoxide-based（2-ME-based）process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility（μsat） and a negative shift in the threshold voltage（VTH）.The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si：H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.
