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Study on the structural,electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering 被引量:8
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作者 马瑞新 王目孔 +1 位作者 康勃 王永刚 《Optoelectronics Letters》 EI 2011年第1期45-48,共4页
Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are... Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%. 展开更多
关键词 Aluminum Electric properties Light transmission Magnetron sputtering Optical properties Scanning electron microscopy Semiconductor doping SUBSTRATES Thin films Zinc oxide
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