A review of the etched terminal structure of a 4H-SiC PiN diode

The comparison of domestic and foreign studies has been utilized to extensively employ junction termination extension(JTE)structures for power devices.However,achieving a gradual doping concentration change in the lateral direction is difficult for SiC devices since the diffusion constants of the implanted aluminum ions in SiC are much less than silicon.Many previously reported studies adopted many new structures to solve this problem.Additionally,the JTE structure is strongly sensitive to the ion implantation dose.Thus,GA-JTE,double-zone etched JTE structures,and SM-JTE with modulation spacing were reported to overcome the above shortcomings of the JTE structure and effectively increase the breakdown voltage.They provided a theoretical basis for fabricating terminal structures of 4H-SiC PiN diodes.This paper summarized the effects of different terminal structures on the electrical properties of SiC devices at home and abroad.Presently,the continuous development and breakthrough of terminal technology have significantly improved the breakdown voltage and terminal efficiency of 4H-SiC PiN power diodes.

A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance

A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode(Hk-SJ-SBD MOSFET)is proposed,and has been compared with the SiC high-k MOSFET(Hk MOSFET),SiC superjuction MOSFET(SJ MOSFET)and the conventional SiC MOSFET in this article.In the proposed SiC Hk-SJ-SBD MOSFET,under the combined action of the p-type region and the Hk dielectric layer in the drift region,the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance(Ron,sp).The integrated Schottky barrier diode(SBD)also greatly improves the reverse recovery performance of the device.TCAD simulation results indicate that the Ron,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm^(2)with a 2240 V breakdown voltage(BV),which is more than 72.4%,23%,5.6%lower than that of the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET with the 1950,2220,and 2220V BV,respectively.The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC,which are greatly reduced by more than 74%and 94%in comparison with those of all the conventional SiC MOSFET,Hk SiC MOSFET and SJ SiC MOSFET,due to the integrated SBD in the proposed MOSFET.And the trade-off relationship between the Ron,sp and the BV is also significantly improved compared with that of the conventional MOSFET,Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature,respectively.In addition,compared with conventional SJ SiC MOSFET,the proposed SiC MOSFET has better immunity to charge imbalance,which may bring great application prospects.

Comparisons and Improvements of Key Operating Characteristics of Current Source Converter Applied in HVDC System

Because of its controlled power factor and no commutation failure,current source converter(CSC)made up of reverse-blocking IGCTs(RB-IGCTs)offers broad application prospects in the field of HVDC system.Valve voltage and power operating range as the most important operating characteristics should be paid attention to but they are always contradictory.First,the relationship between valve voltage and modulation index is obtained.In particular,valve voltage of converter under the three typical modulation methods is compared,analyzed,and verified.Second,with the help of the independent control strategy and coordinated control strategy of both ends,power operating ranges of the three modulation methods are comprehensively analyzed and compared.Third,in order to solve power coupling at a low active power,the improved coordination control strategy at both ends in this paper is proposed and the relationships among active power,reactive power,DC current and phase angle difference are given in detail.Finally,a 500 kV/3 kA simulation system was built in PSCAD/EMTDC to obtain comparison results of the key operating characteristics of CSC under different modulation methods and the converter can realize unity power operation under random active power after adopting the improved coordinated control strategy,and DC current does not decrease to zero,verifying effectiveness of the coordinated control strategy.

Electrochemical impedance spectroscopy analysis to accelerate electrocatalytic system innovation

Electrochemical impedance spectroscopy(EIS)is a well-established non-destructive characterization technique for assessing the efficacy of electrochemical energy storage and conversion systems.Electrocatalytic systems based on proton exchange membrane(PEM),including PEM fuel cells and PEM water electrolyzers,play a crucial role in renewable energy conversion through electricity–hydrogen interconversion.EIS,along with its derived analysis methods—equivalent circuit model(ECM),distribution of relaxation time(DRT),and dynamic EIS(DEIS),is widely utilized to extract valuable kinetics and impedance data.The acquired information affords critical insights into processes such as mass transfer,charge transfer,and proton transfer within PEM systems.This mini review surveys the role of EIS in optimizing components and investigating operational conditions to enhance the efficiency of PEM systems.In addition,it encapsulates the principles and applications of EIS-based methods like DRT and DEIS,highlighting their potential in the practical application of PEM systems.