Band engineering of valleytronics WSe_(2)–MoS_(2)heterostructures via stacking form,magnetic moment and thickness

Spin-valley polarization and bandgap regulation are critical in the developing of quantum devices.Here,by employing the density functional theory,we investigate the effects of stacking form,thickness and magnetic moment in the electronic structures of WSe_(2)–MoS_(2)heterostructures.Calculations show that spin-valley polarization maintains in all situations.Increasing thickness of 2H-MoS_(2)not only tunes the bandgap but also changes the degeneracy of the conduction band minimums(CBM)at K/K_(1) points.Gradual increase of micro magnetic moment tunes the bandgap and raises the valence band maximums(VBM)atΓpoint.In addition,the regulation of band gap by the thickness of 2H-MoS_(2)and introduced magnetic moment depends on the stacking type.Results suggest that WSe_(2)–MoS_(2)heterostructure supports an ideal platform for valleytronics applications.Our methods also give new ways of optical absorption regulation in spin-valley devices.

Magnetic proximity effect in the two-dimensional ε-Fe_(2)O_(3)/NbSe_(2)heterojunction

Two-dimensional(2D)magnet/superconductor heterostructures can promote the design of artificial materials for exploring 2D physics and device applications by exotic proximity effects.However,plagued by the low Curie temperature and instability in air,it is hard to realize practical applications for the reported layered magnetic materials at present.In this paper,we developed a space-confined chemical vapor deposition method to synthesize ultrathin air-stable ε-Fe_(2)O_(3) nanosheets with Curie temperature above 350 K.The ε-Fe_(2)O_(3)/NbSe_(2) heterojunction was constructed to study the magnetic proximity effect on the superconductivity of the NbSe_(2) multilayer.The electrical transport results show that the subtle proximity effect can modulate the interfacial spin–orbit interaction while undegrading the superconducting critical parameters.Our work paves the way to construct 2D heterojunctions with ultrathin nonlayered materials and layered van der Waals(vdW)materials for exploring new physical phenomena.

Enhanced resonance frequency in Co2FeAl thin film with different thicknesses grown on flexible graphene substrate

The flexible materials exhibit more favorable properties than most rigid substrates in flexibility,weight saving,mechanical reliability,and excellent environmental toughness.Particularly,flexible graphene film with unique mechanical properties was extensively explored in high frequency devices.Herein,we report the characteristics of structure and magnetic properties at high frequency of Co2FeAl thin film with different thicknesses grown on flexible graphene substrate at room temperature.The exciting finding for the columnar structure of Co2FeAl thin film lays the foundation for excellent high frequency property of Co2FeAl/flexible graphene structure.In-plane magnetic anisotropy field varying with increasing thickness of Co2FeAl thin film can be obtained by measurement of ferromagnetic resonance,which can be ascribed to the enhancement of crystallinity and the increase of grain size.Meanwhile,the resonance frequency which can be achieved by the measurement of vector network analyzer with the microstrip method increases with increasing thickness of Co2FeAl thin film.Moreover,in our case with graphene film,the resonance magnetic field is quite stable though folded for twenty cycles,which demonstrates that good flexibility of graphene film and the stability of high frequency magnetic property of Co2FeAl thin film grown on flexible graphene substrate.These results are promising for the design of microwave devices and wireless communication equipment.

Visualizing the Local Twist Angle Variation within and between Domains of Twisted Bilayer Graphene

Moirésuperlattices in twisted two-dimensional materials have emerged as ideal platforms for engineering quantum phenomena,which are highly sensitive to twist angles,including both the global value and the spatial inhomogeneity.However,only a few methods provide spatial-resolved information for characterizing local twist angle distribution.

Accurate determination of anisotropic thermal conductivity for ultrathin composite film

Highly anisotropic thermal conductive materials are of significance in thermal management applications. However,accurate determination of ultrathin composite thermal properties is a daunting task due to the tiny thermal conductance,severely hindering the further exploration of novel efficient thermal management materials, especially for size-confined environments. In this work, by utilizing a hybrid measuring method, we demonstrate an accurate determination of thermal properties for montmorillonite/reduced graphene oxide(MMT/r GO) composite film with a thickness range from 0.2 μm to2 μm. The in-plane thermal conductivity measurement is realized by one-dimensional(1D) steady-state heat conduction approach while the cross-plane one is achieved via a modified 3ω method. As-measured thermal conductivity results are cross-checked with different methods and known materials, revealing the high measurement accuracy. A high anisotropic ratio of 60.5, independent of composite thickness, is observed in our measurements, further ensuring the negligible measurement error. Notably, our work develops an effective approach to the determination of ultrathin composite thermal conductivity, which may promote the development of ultrathin composites for potential thermal-related applications.

Highly flexible and excellent performance continuous carbon nanotube fibrous thermoelectric modules for diversified applications

A highly flexible and continuous fibrous thermoelectric(TE)module with high-performance has been fabricated based on an ultra-long single-walled carbon nanotube fiber,which effectively avoids the drawbacks of traditional inorganic TE based modules.The maximum output power density of a 1-cm long fibrous TE module with 8 p–n pairs can reach to 3436μW·cm^(-2),the power per unit weight to 2034μW·g^(-1),at a steady-state temperature difference of 50 K.The continuous fibrous TE module is used to detect temperature change of a single point,which exhibits a good responsiveness and excellent stability.Because of its adjustability in length,the flexible fibrous TE module can satisfy the transformation of the temperature difference between two distant heat sources into electrical energy.Based on the signal of the as-fabricated TE module,a multi-region recognizer has been designed and demonstrated.The highly flexible and continuous fibrous TE module with excellent performance shows a great potential in diversified applications of TE generation,temperature detection,and position identification.

Optically Detected Magnetic Resonance of Diamond Nitrogen-Vacancy Centers under Megabar Pressures

Megabar pressures are of crucial importance for cutting-edge studies of condensed matter physics and geophysics.With the development of diamond anvil cell(DAC),laboratory studies of high pressure have entered the megabar era for decades.However,it is still challenging to implement in situ magnetic sensing under ultrahigh pressures.In this work,we demonstrate optically detected magnetic resonance and coherent quantum control of diamond nitrogen-vacancy(NV)center,a promising quantum sensor inside the DAC,up to 1.4 Mbar.The pressure dependence of optical and spin properties of NV centers in diamond are quantified,and the evolution of an external magnetic field has been successfully tracked at about 80 GPa.These results shed new light on our understanding of diamond NV centers and pave the way for quantum sensing under extreme conditions.

Electronic states of domain walls in commensurate charge density wave ground state and mosaic phase in 1T-TaS_(2)

Domain walls(DWs)in the charge-density-wave(CDW)Mott insulator 1T-TaS_(2)have unique localized states,which play an important role in exploring the electronic properties of the material.However,the electronic states in DWs in 1TTaS_(2)have not been clearly understood,mostly due to the complex structures,phases,and interlayer stacking orders in the DW areas.Here,we explored the electronic states of DWs in the large-area CDW phase and mosaic phase of 1T-TaS_(2)by scanning tunneling spectroscopy.Due to the different densities of DWs,the electronic states of DWs show distinct features in these phases.In the large area CDW phase,both the domain and the DWs(DW1,DW2,DW4)have zero conductance at the Fermi level;while in the mosaic phase,they can be metallic or insulating depending on their environments.In areas with a high density of DWs,some electronic states were observed both on the DWs and within the domains,indicating delocalized states over the whole region.Our work contributes to further understanding of the interplay between CDW and electron correlations in 1T-TaS_(2).

Controlled crossover of electron transport in graphene nanoconstriction:From Coulomb blockade to electron interference

The ability to control transport behaviors in nanostructure is crucial for usage as a fundamental research platform as well as a practical device.In this study,we report a gate-controlled crossover of electron transport behaviors using graphene nanoconstrictions as a platform.The observed transport properties span from Coulomb blockade-dominated single electron transmission to electron-wave interference-dominated quantum behavior.Such drastic modulation is achieved by utilizing a single back gate on a graphene nanoconstriction structure,where the size of nanostructure in the constriction and coupling strength of it to the electrodes can be tuned electrically.Our results indicate that electrostatic field by gate voltage upon the confined nanostructure defines both the size of the nanoconstriction as well as its interaction to electrodes.Increasing gate voltage raises Fermi level to cross the energy profile in the nanoconstriction,resulting in decreased energy barriers which affect the size of nanoconstriction and transmissivity of electrons.The gate-tunable nanoconstriction device can therefore become a potential platform to study quantum critical behaviors and enrich electronic and spintronic devices.

Fabrication of honeycomb AuTe monolayer with Dirac nodal line fermions

Two-dimensional honeycomb lattices show great potential in the realization of Dirac nodal line fermions(DNLFs).Here,we successfully synthesized a gold telluride(AuTe)monolayer by direct tellurizing an Au(111)substrate.Low energy electron diffraction measurements reveal that it is(2×2)AuTe layer stacked onto(3×3)Au(111)substrate.Moreover,scanning tunneling microscopy images show that the AuTe layer has a honeycomb structure.Scanning transmission electron microscopy reveals that it is a single-atom layer.In addition,first-principles calculations demonstrate that the honeycomb AuTe monolayer exhibits Dirac nodal line features protected by mirror symmetry,which is validated by angle-resolved photoemission spectra.Our results establish that monolayer AuTe can be a good candidate to investigate 2D DNLFs and provides opportunities to realize high-speed low-dissipation devices.

Electronic structures of vacancies in Co_(3)Sn_(2)S_(2)

Co_(3)Sn_(2)S_(2)has attracted a lot of attention for its multiple novel physical properties,including topological nontrivial surface states,anomalous Hall effect,and anomalous Nernst effect.Vacancies,which play important roles in functional materials,have attracted increasing research attention.In this paper,by using density functional theory calculations,we first obtain band structures and magnetic moments of Co_(3)Sn_(2)S_(2)with exchange–correlation functionals at different levels.It is found that the generalized gradient approximation gives the positions of Weyl points consistent with experiments in bulk Co_(3)Sn_(2)S_(2).We then investigate the electronic structures of defects on surfaces with S and Sn terminations which have been observed in experiments.The results show that the single sulfur vacancy on the S-terminated surface introduces localized bond states inside the bandgap near the Fermi level.For di-and tri-sulfur vacancies,the localized defect states hybridize with neighboring ones,forming bonding states as well as anti-bonding states.The Sn vacancy on the Sn-terminated surface also introduces localized bond states,which are merged with the valence bands.These results provide a reference for future experimental investigations of vacancies in Co_(3)Sn_(2)S_(2).

First principles study of hafnium intercalation between graphene and Ir(111)substrate

The intercalation of heteroatoms between graphene and metal substrates is a promising method for integrating epitaxial graphene with functional materials.Various elements and their oxides have been successfully intercalated into graphene/metal interfaces to form graphene-based heterostructures,showing potential applications in electronic devices.Here we theoretically investigate the hafnium intercalation between graphene and Ir(111).It is found that the penetration barrier of Hf atom is significantly large due to its large atomic radius,which suggests that hafnium intercalation should be carried out with low deposition doses of Hf atoms and high annealing temperatures.Our results show the different intercalation behaviors of a large-size atom and provide guidance for the integration of graphene and hafnium oxide in device applications.

Laser-induced phase conversion of n-type SnSe_(2)to p-type SnSe

We report a facile phase conversion method that can locally convert n-type SnSe_(2)into p-type SnSe by direct laser irradiation.Raman spectra of SnSe_(2)flakes before and after laser irradiation confirm the phase conversion of SnSe_(2)to SnSe.By performing the laser irradiation on SnSe_(2)flakes at different temperatures,it is found that laser heating effect induces the removal of Se atoms from SnSe_(2)and results in the phase conversion of SnSe_(2)to SnSe.Lattice-revolved transmission electron microscope images of SnSe_(2)flakes before and after laser irradiation further confirm such conversion.By selective laser irradiation on SnSe_(2)flakes,a pattern with SnSe_(2)/SnSe heteostructures is created.This indicates that the laser induced phase conversion technique has relatively high spatial resolution and enables the creation of micron-sized in-plane p-n junction at predefined region.

Substrate tuned reconstructed polymerization of naphthalocyanine on Ag(110)

The linkage structures between monomers make great influence on the properties of polymers.The synthesis of some special linkage structures can be challenging,which is often overcome by employing special reaction conditions.Here,we build dihydropentalene linkage in poly-naphthalocyanine on Ag(110)surface.Scanning tunneling microscopy(STM)and non-contact atomic force microscopy(nc-AFM)measurements confirm the dihydropentalene linkage structure and a possible formation path with reconstruction steps is proposed.The controlled experiment on Ag(100)surface shows no dihydropentalene structures formed,which indicates the grooved substrate is necessary for the reconstruction.This work provides insights into the surface restricted reactions that can yield special structures in organic polymers.

The Unconventional Influence of a Nearby Molecule onto Transport of Single C60 Molecule Transistor

We study the transport property of single C60 molecular transistors with special focus on the situation that other molecules are in vicinity.The devices are prepared using electromigration and thermal deposition techniques.Pure single C60 molecule transistors show typical coulomb blockade behavior at low temperature.When we increase the coverage of molecules slightly by extending the deposition time,the transport spectrum of devices displays a switching behavior in the general coulomb blockade pattern.We attribute this unconventional phenomenon to the influence from a nearby C60 molecule.By analyzing this transport behavior quantitatively based on the parallel-double-quantum-dot model,the interaction from the nearby molecule is proved to be of capacity and tunneling coupling.Thermal stimulation is also applied to the device to investigate the effect of local charging environment variation on intermolecular interaction.

Bipolar Thermoelectrical Transport of SnSe Nanoplate in Low Temperature

Bulk SnSe is an excellent thermoelectrical material with the highest figure-of-merit value of ZT=2.&making it promising in applications.Temperature-dependent electrical and thermoelectrical properties of SnSe nanoplates are studied at low temperature.Conductivity drops and rises again as temperature is lowered.The Seebeck coefficient is positive at room temperature and becomes negative at low temperature.The change of the sign of the Seebeck coefficient indicates influence of bipolar transport of the semiconductive SnSe nanoplate.The bipolar transport is caused by the Fermi energy changing with temperature due to different contributions from donors and acceptors at different temperatures.

Type-II Dirac Semimetal State in a Superconductor Tantalum Carbide

The exploration of topological Dirac semimetals with intrinsic superconductivity can be a most plausible way to discover topological superconductors.We propose that type-II Dirac semimetal states exist in the band structure of TaC,a well-known s-wave superconductor,by using the first-principles calculations and theκ· p effective model.The tilted gapless Dirac cones,which are composed of Ta d and C p orbitals and are protected by C4v symmetry,are found to be below the Fermi level.The bands from Ta d orbitals are greatly coupled with the acoustic modes around the zone boundary,indicating their significant contribution to the superconductivity.The relatively high transition temperature^10.5 K is estimated to be consistent with the experimental data.To bring the type-II Dirac points close to chemical potential,hole doping is needed.This seems to decrease the transition temperature a lot,making the realization of topological superconductivity impossible.

多带笼目超导体CsV_(3)Sb_(5)衍生体系的可调磁通涡旋束缚态

Vortices and bound states offer an effective means of comprehending the electronic properties of superconductors.Recently,surface-dependent vortex core states have been observed in the newly discovered kagome superconductors CsV_(3)Sb_(5).Although the spatial distribution of the sharp zero energy conductance peak appears similar to Majorana bound states arising from the superconducting Dirac surface states,its origin remains elusive.In this study,we present observations of tunable vortex bound states(VBSs)in two chemically-doped kagome superconductors Cs(V_(1-x)Tr_(x))_(3)Sb_(5)(Tr=Ta or Ti),using low-temperature scanning tunneling microscopy/spectroscopy.The CsV_(3)Sb_(5)-derived kagome superconductors exhibit full-gap-pairing superconductivity accompanied by the absence of long-range charge orders,in contrast to pristine CsV_(3)Sb_(5).Zero-energy conductance maps demonstrate a field-driven continuous reorientation transition of the vortex lattice,suggesting multiband superconductivity.The Ta-doped CsV_(3)Sb_(5)displays the conventional cross-shaped spatial evolution of Caroli-de Gennes-Matricon bound states,while the Tidoped CsV_(3)Sb_(5)exhibits a sharp,non-split zero-bias conductance peak(ZBCP)that persists over a long distance across the vortex.The spatial evolution of the non-split ZBCP is robust against surface effects and external magnetic field but is related to the doping concentrations.Our study reveals the tunable VBSs in multiband chemically-doped CsV_(3)Sb_(5)system and offers fresh insights into previously reported Y-shaped ZBCP in a non-quantum-limit condition at the surface of kagome superconductor.

高质量PtP_(2)晶体中的三维弱局域化和负磁阻效应

近年来,含有五元环排列结构的PtP_(2)单晶和二维材料因具有丰富的物理和化学性能而得到广泛关注,有望应用于高性能电子和光电子器件.本文通过优化Pt和P的初始摩尔比,采用助溶剂法制备了高质量的PtP_(2)单晶,并在PtP_(2)单晶中首次发现了三维弱局域化和负磁阻效应.晶体结构、磁性和光谱测试表明,PtP_(2)单晶中的少量缺陷可抑制负磁阻效应和磁有序态.本文提出了合成高质量贵金属磷化物单晶的有效方法,为研究磷化物中多种关联电子态提供了新的平台.

Construction of twisted graphene–silicene heterostructures

Van der Waals stacking of two-dimensional crystals with rotation or mismatch in lattice constants gives rise to rich physical phenomena that are closely related to the strong correlations and band topology.Twisted graphene and silicene heterobilayers have been theoretically predicted to host a tunable transport gap due to the mismatch of Dirac cones in the graphene and silicene layers.However,experimental realization of such twisted structure is challenging.Here,we report the formation of twisted graphene/silicene bilayers on Ru(0001)crystal via intercalation.Different moirépatterns form as single-crystalline graphene grows over different grains of the Ru surface.After silicon intercalation,graphene/silicene bilayers are observed with different twisting angles on top of different grains of the Ru substrate.Our work provides a new pathway towards construction of graphene based twisted heterobilayers.