In this paper,the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated.It was found that the bombardment increases the light absorption by two to ele...In this paper,the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated.It was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times.This has never been reported before of amorphous Si with electron beam evaporation deposition.展开更多
We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the imp...We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the impurity and the oxide on the air-cleaved facets of laser diodes. It is proven that the way has marked effect on reducing the gradual degradation rate of laser diodes and improving the catastrophic-optical-damage threshold.展开更多
基金Supported by National Key Basic Research Plan of China (G200068302) ,Beijing Education Committee funding (KM200310005009) ,Beijing Municipal Science & Technology commission fun-ding(D0404003040221)
文摘In this paper,the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated.It was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times.This has never been reported before of amorphous Si with electron beam evaporation deposition.
文摘We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the impurity and the oxide on the air-cleaved facets of laser diodes. It is proven that the way has marked effect on reducing the gradual degradation rate of laser diodes and improving the catastrophic-optical-damage threshold.
