Defects in S doped GaP single crystal which is prepared by LEC method were observed using SEM and positron lifetime,and its change with thermal treatment temperature was measured using positron annihilation spectromet...Defects in S doped GaP single crystal which is prepared by LEC method were observed using SEM and positron lifetime,and its change with thermal treatment temperature was measured using positron annihilation spectrometer.The relationship between positron lifetime and the combination state of defects was discussed.展开更多
文摘Defects in S doped GaP single crystal which is prepared by LEC method were observed using SEM and positron lifetime,and its change with thermal treatment temperature was measured using positron annihilation spectrometer.The relationship between positron lifetime and the combination state of defects was discussed.
