Zn1-xMgxO films are grown on A-sapphire substrates by molecular beam epitaxy, and Mg content in the Zn1-xMgxO films is measured by electron probe microanalysis （EPMA） when the acceleration voltage, the emission curr...Zn1-xMgxO films are grown on A-sapphire substrates by molecular beam epitaxy, and Mg content in the Zn1-xMgxO films is measured by electron probe microanalysis （EPMA） when the acceleration voltage, the emission current, and the magnification are set to be 1 k V, 30 μA and 1000, respectively. The dead time is controlled within 17%-20% during the measurement with the receive angle of characteristic x-ray of 45°. The Mg content of the ZnMgO film is calculated by the low energy calibration and the ZAF calibration. By comparing the measurement result with the theoretical analysis and the EPMA result with the inductively coupled plasma （ICP）, one can obtain that the measured value of Mg content of the samples is in good agreement with the theoretical analysis no matter whether the phase separation exists or not, and the correctness of ICP and EPMA is valid when Mg content in the samples is less than 0.5.展开更多
The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model ...The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.展开更多
文摘Zn1-xMgxO films are grown on A-sapphire substrates by molecular beam epitaxy, and Mg content in the Zn1-xMgxO films is measured by electron probe microanalysis （EPMA） when the acceleration voltage, the emission current, and the magnification are set to be 1 k V, 30 μA and 1000, respectively. The dead time is controlled within 17%-20% during the measurement with the receive angle of characteristic x-ray of 45°. The Mg content of the ZnMgO film is calculated by the low energy calibration and the ZAF calibration. By comparing the measurement result with the theoretical analysis and the EPMA result with the inductively coupled plasma （ICP）, one can obtain that the measured value of Mg content of the samples is in good agreement with the theoretical analysis no matter whether the phase separation exists or not, and the correctness of ICP and EPMA is valid when Mg content in the samples is less than 0.5.
文摘The Mg content of Zn1-xMgxO film grown on A-sapphire substrates by plasma-assisted molecular beam epitaxy is measured by inductively coupled plasma (ICP) and electronic probe microanalysis (EPMA). A theoretical model for analyzing the difference in the Mg content between Zn-rich and Zn-deficient conditions in the growth process is established, and the mathematical relation between Mg content and the temperature of the Mg cell is formulated under Zn-rich condition. The formula derived is proven to be correct by experiments.
