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Unlocking the multi-electron transfer reaction in NASICON-type cathode materials
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作者 Yuan Liu Xiaohui Rong +4 位作者 Fei Xie Yaxiang Lu Junmei Zhao Liquan Chen Yong-Sheng Hu 《Materials Futures》 2023年第2期109-122,共14页
The growing concern about scarcity and large-scale applications of lithium resources has attracted efforts to realize cost-effective phosphate-based cathode materials for next-generation Na-ion batteries(NIBs).In prev... The growing concern about scarcity and large-scale applications of lithium resources has attracted efforts to realize cost-effective phosphate-based cathode materials for next-generation Na-ion batteries(NIBs).In previous work,a series of materials(such as Na_(4)Fe_(3)(PO_(4))_(2)(P_(2)O_(7)),Na_(3)VCr(PO_(4))_(3),Na_(4)VMn(PO_(4))3,Na_(3)MnTi(PO_(4))_(3),Na_(3)MnZr(PO_(4))3,etc)with∼120 mAh g^(-1) specific capacity and high operating potential has been proposed.However,the mass ratio of the total transition metal in the above compounds is only∼22 wt%,which means that one-electron transfer for each transition metal shows a limited capacity(the mass ratio of Fe is 35.4 wt%in LiFePO_(4)).Therefore,a multi-electron transfer reaction is necessary to catch up to or go beyond the electrochemical performance of LiFePO_(4).This review summarizes the reported NASICON-type and other phosphate-based cathode materials.On the basis of the aforementioned experimental results,we pinpoint the multi-electron behavior of transition metals and shed light on designing rules for developing high-capacity cathodes in NIBs. 展开更多
关键词 NASICON Na-ion batteries cathode materials multi-electron transfer reactions
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Thickness properties hexagonal and temperature dependent electrical of ZrS2 thin films directly grown on boron nitride 被引量:2
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作者 Yiming Zhu Xinsheng Wang +2 位作者 Mei Zhang Congzhong Cai Liming Xie 《Nano Research》 SCIE EI CAS CSCD 2016年第10期2931-2937,共7页
Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature depen... Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metal- insulator transition, and T-γ (γ- 0.82-1.26) temperature dependent mobility were observed in the ZrS2 films. 展开更多
关键词 chemical vapor deposition two-dimensional materials ZrS2 electrical transport MOBILITY
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