Advanced DriverAssistance Systems(ADAS)technologies can assist drivers or be part of automatic driving systems to support the driving process and improve the level of safety and comfort on the road.Traffic Sign Recogn...Advanced DriverAssistance Systems(ADAS)technologies can assist drivers or be part of automatic driving systems to support the driving process and improve the level of safety and comfort on the road.Traffic Sign Recognition System(TSRS)is one of themost important components ofADAS.Among the challengeswith TSRS is being able to recognize road signs with the highest accuracy and the shortest processing time.Accordingly,this paper introduces a new real time methodology recognizing Speed Limit Signs based on a trio of developed modules.Firstly,the Speed Limit Detection(SLD)module uses the Haar Cascade technique to generate a new SL detector in order to localize SL signs within captured frames.Secondly,the Speed Limit Classification(SLC)module,featuring machine learning classifiers alongside a newly developed model called DeepSL,harnesses the power of a CNN architecture to extract intricate features from speed limit sign images,ensuring efficient and precise recognition.In addition,a new Speed Limit Classifiers Fusion(SLCF)module has been developed by combining trained ML classifiers and the DeepSL model by using the Dempster-Shafer theory of belief functions and ensemble learning’s voting technique.Through rigorous software and hardware validation processes,the proposedmethodology has achieved highly significant F1 scores of 99.98%and 99.96%for DS theory and the votingmethod,respectively.Furthermore,a prototype encompassing all components demonstrates outstanding reliability and efficacy,with processing times of 150 ms for the Raspberry Pi board and 81.5 ms for the Nano Jetson board,marking a significant advancement in TSRS technology.展开更多
For efficient colloidal quantum dot(CQD)solar cells(CQD-SCs),thiol-passivated p-type CQDs are generally used as a hole-transporting material(HTM);however,there are issues with the control of optoelectrical properties,...For efficient colloidal quantum dot(CQD)solar cells(CQD-SCs),thiol-passivated p-type CQDs are generally used as a hole-transporting material(HTM);however,there are issues with the control of optoelectrical properties,low thiol passivation rate,and poor morphology with a power conversion efficiency(PCE)of approximately 11%.Although polymeric HTMs have been introduced to address these issues,maximizing efficiency and achieving green-solvent processability and thermal stability for commercialization is necessary.Here,we synthesize a novel benzodifuran(BDF)-based HTM(asy-ranPBTBDF)showing an electron-deficient state,low steric hindrance,and low planarity compared to those of a typical benzodithiophene(BDT)-based HTM(asy-ranPBTBDT).BDF properties lead to deep high occupied molecular orbital(HOMO)levels,closeπ-πstacking,excellent solubility,and amorphous properties related to efficiency,green-solvent processability,and thermal stability.With these benefits,the asy-ranPBTBDF-based CQD-SC showed enhanced open-circuit voltage(Voc)(0.65 V)and PCE(13.29%)compared to those of the asy-ranPBTBDT-based device(0.63 V and 12.22%)in toxic processes with chlorobenzene.The asy-ranPBTBDF-based CQD-SC showed a PCE of 12.51%in a green-solvent process with 2-methylanisole and improved thermal stability at 80℃(83.8%retaining after 24 h)owing to less lateral crystallization than the asy-ranPBTBDT-based device(60.8%retaining after 24 h).展开更多
An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel ...An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi2Te4, by alternate growth of a Bi2Te3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.展开更多
Recently,intrinsic antiferromagnetic topological insulator MnBi_(2)Te_(4) has drawn intense research interest and leads to plenty of significant progress in physics and materials science by hosting quantum anomalous H...Recently,intrinsic antiferromagnetic topological insulator MnBi_(2)Te_(4) has drawn intense research interest and leads to plenty of significant progress in physics and materials science by hosting quantum anomalous Hall effect,axion insulator state,and other quantum phases.An essential ingredient to realize these quantum states is the magnetic gap in the topological surface states induced by the out-of-plane ferromagnetism on the surface of MnBi_(2)Te_(4).However,the experimental observations of the surface gap remain controversial.Here,we report the observation of the surface gap via the point contact tunneling spectroscopy.In agreement with theoretical calculations,the gap size is around 50 me V,which vanishes as the sample becomes paramagnetic with increasing temperature.The magnetoresistance hysteresis is detected through the point contact junction on the sample surface with an out-of-plane magnetic field,substantiating the surface ferromagnetism.Furthermore,the non-zero transport spin polarization coming from the ferromagnetism is determined by the point contact Andreev reflection spectroscopy.Combining these results,the magnetism-induced gap in topological surface states of MnBi_(2)Te_(4) is revealed.展开更多
Calcium-release-activated calcium(CARC)channels are one of the major pathways of calcium entry in non-excitable cells.Despite a decade or two of research,its regulatory mechanism is not yet thoroughly understood.The s...Calcium-release-activated calcium(CARC)channels are one of the major pathways of calcium entry in non-excitable cells.Despite a decade or two of research,its regulatory mechanism is not yet thoroughly understood.The slow progress is due to the complexity of its pores(i.e.,Orai)on one hand and the difficulty in capturing its regulatory complex on the other hand.As a result,possible gating mechanisms have often been speculated by exploring the structure and properties of constitutive open mutants.However,there is much debate about how they can truly reflect the gating of CRAC channels under physiological conditions.In the present study,we combined molecular dynamics simulations with free energy calculations to study three dOrai mutants(G170P,H206A,and P288A),and further calculated their current-voltage curves.Results show that these constructs adopt different approaches to maintain their conductive state.Meanwhile they have unique pore structures and distinctive rectification properties and ion selectivity for cations compared to wild-type pores.We conclude that although the mutants may partially capture the gating motion characteristics of wild-type pores,the information obtained from these mutants is likely not a true reflection of CRAC channel gating under physiological conditions.展开更多
Bulk materials were synthesized by the Bridgman technique using the elements Cu, Ga, Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X...Bulk materials were synthesized by the Bridgman technique using the elements Cu, Ga, Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity. Optical response (Photoconductivity) and Photoluminescence (PL) and PL-excitation (PLE) at temperatures from 4.2 to 77 K were also used to estimate the band-gap energy of Cu-Ga<sub>3</sub>Se<sub>5</sub>. They show a nearly perfect stoechiometry and present p-type conductivity. CuGa<sub>3</sub>Se<sub>5</sub> either have an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained by Photoconductivity and Photoluminescence (PL) for the different samples is 1.85 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type. The defects that appear are probably Ga<sub>Cu</sub>.展开更多
This article explores controllable Borel spaces, stationary, homogeneous Markov processes, discrete time with infinite horizon, with bounded cost functions and using the expected total discounted cost criterion. The p...This article explores controllable Borel spaces, stationary, homogeneous Markov processes, discrete time with infinite horizon, with bounded cost functions and using the expected total discounted cost criterion. The problem of the estimation of stability for this type of process is set. The central objective is to obtain a bounded stability index expressed in terms of the Lévy-Prokhorov metric;likewise, sufficient conditions are provided for the existence of such inequalities.展开更多
The important role of high-energy intramolecular vibrational modes for excitation energy transfer in the detuned photosynthetic systems is studied. Based on a basic dimer model which consists of two two-level systems ...The important role of high-energy intramolecular vibrational modes for excitation energy transfer in the detuned photosynthetic systems is studied. Based on a basic dimer model which consists of two two-level systems (pigments) coupled to high-energy vibrational modes, we find that the high-energy intramolecular vibrational modes can enhance the energy transfer with new coherent transfer channels being opened when the phonon energy matches the detuning between the two pigments. As a result, the energy can be effectively transferred into the acceptor. The effective Hamiltonian is obtained to reveal the strong coherent energy exchange among the donor, the acceptor, and the high-energy intramolecular. A semi-classical explanation of the phonon-assisted mechanism is also shown.展开更多
Layered material indium selenide(InxSey)is a promising candidate for building next-generation electronic and photonic devices.We report a zirconium aided MBE growth of this van der Waals material.When co-depositing zi...Layered material indium selenide(InxSey)is a promising candidate for building next-generation electronic and photonic devices.We report a zirconium aided MBE growth of this van der Waals material.When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃at a constant zirconium flux rate of 0.01 ML/min,the polymorphic Inx Sey layer emerges on top of the insulating ZrSe2 layer.Different archetypes,such as InSe,α-In2Se3 and α-In2Se3,are found in the InxSey layers.A negative magnetoresistance of 40%at 2 K under 9 T magnetic field is observed.Such an InxSeyZrSe2 heterostructure with good lattice-matching may serve as a candidate for device applications.展开更多
Bulk materials were synthesized by the Bridgman technique using the elements Cu, In and Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as b...Bulk materials were synthesized by the Bridgman technique using the elements Cu, In and Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity, Optical response (Photoconductivity) and Photoluminescence (PL) to determine the band gap value and Spectroscopic Ellipsometry to find energy levels above the gap in the band scheme at room-temperature. They show a nearly perfect stoechiometry and present a p-type conductivity. CuIn3Se5 either has a Stannite structure, an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained for the different samples was 1.23 eV. Energy levels above the gap in the band scheme were determinate by measuring the dielectric function at room temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples. Spectroscopic Ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum.展开更多
文摘Advanced DriverAssistance Systems(ADAS)technologies can assist drivers or be part of automatic driving systems to support the driving process and improve the level of safety and comfort on the road.Traffic Sign Recognition System(TSRS)is one of themost important components ofADAS.Among the challengeswith TSRS is being able to recognize road signs with the highest accuracy and the shortest processing time.Accordingly,this paper introduces a new real time methodology recognizing Speed Limit Signs based on a trio of developed modules.Firstly,the Speed Limit Detection(SLD)module uses the Haar Cascade technique to generate a new SL detector in order to localize SL signs within captured frames.Secondly,the Speed Limit Classification(SLC)module,featuring machine learning classifiers alongside a newly developed model called DeepSL,harnesses the power of a CNN architecture to extract intricate features from speed limit sign images,ensuring efficient and precise recognition.In addition,a new Speed Limit Classifiers Fusion(SLCF)module has been developed by combining trained ML classifiers and the DeepSL model by using the Dempster-Shafer theory of belief functions and ensemble learning’s voting technique.Through rigorous software and hardware validation processes,the proposedmethodology has achieved highly significant F1 scores of 99.98%and 99.96%for DS theory and the votingmethod,respectively.Furthermore,a prototype encompassing all components demonstrates outstanding reliability and efficacy,with processing times of 150 ms for the Raspberry Pi board and 81.5 ms for the Nano Jetson board,marking a significant advancement in TSRS technology.
基金supported by National Research Foundation of Korea(NRF)grant funded by Ministry of Science and ICT(MSIT)(2021R1A2C3004420,2021M3H4A1A02055684,and 2020R1C1C1012256)the DGIST R&D Program of the Ministry of Science and ICT(21-CoE-ET-01)Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(2021R1A6A3A14038599).
文摘For efficient colloidal quantum dot(CQD)solar cells(CQD-SCs),thiol-passivated p-type CQDs are generally used as a hole-transporting material(HTM);however,there are issues with the control of optoelectrical properties,low thiol passivation rate,and poor morphology with a power conversion efficiency(PCE)of approximately 11%.Although polymeric HTMs have been introduced to address these issues,maximizing efficiency and achieving green-solvent processability and thermal stability for commercialization is necessary.Here,we synthesize a novel benzodifuran(BDF)-based HTM(asy-ranPBTBDF)showing an electron-deficient state,low steric hindrance,and low planarity compared to those of a typical benzodithiophene(BDT)-based HTM(asy-ranPBTBDT).BDF properties lead to deep high occupied molecular orbital(HOMO)levels,closeπ-πstacking,excellent solubility,and amorphous properties related to efficiency,green-solvent processability,and thermal stability.With these benefits,the asy-ranPBTBDF-based CQD-SC showed enhanced open-circuit voltage(Voc)(0.65 V)and PCE(13.29%)compared to those of the asy-ranPBTBDT-based device(0.63 V and 12.22%)in toxic processes with chlorobenzene.The asy-ranPBTBDF-based CQD-SC showed a PCE of 12.51%in a green-solvent process with 2-methylanisole and improved thermal stability at 80℃(83.8%retaining after 24 h)owing to less lateral crystallization than the asy-ranPBTBDT-based device(60.8%retaining after 24 h).
基金Supported by the Ministry of Science and Technology of Chinathe National Science Foundation of Chinathe Beijing Advanced Innovation Center for Future Chip(ICFC)
文摘An intrinsic magnetic topological insulator(TI) is a stoichiometric magnetic compound possessing both inherent magnetic order and topological electronic states. Such a material can provide a shortcut to various novel topological quantum effects but remained elusive experimentally for a long time. Here we report the experimental realization of thin films of an intrinsic magnetic TI, MnBi2Te4, by alternate growth of a Bi2Te3 quintuple layer and a MnTe bilayer with molecular beam epitaxy. The material shows the archetypical Dirac surface states in angle-resolved photoemission spectroscopy and is demonstrated to be an antiferromagnetic topological insulator with ferromagnetic surfaces by magnetic and transport measurements as well as first-principles calculations. The unique magnetic and topological electronic structures and their interplays enable the material to embody rich quantum phases such as quantum anomalous Hall insulators and axion insulators at higher temperature and in a well-controlled way.
基金Supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0303302,2018YFA0305604,2018YFA0307100)the National Natural Science Foundation of China (Grant Nos. 11888101,11774008,11704279,11874035,51788104)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000)the Beijing Natural Science Foundation (Grant Nos. Z180010 and 1202005)the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,Tsinghua University (Grant No. KF202001)
文摘Recently,intrinsic antiferromagnetic topological insulator MnBi_(2)Te_(4) has drawn intense research interest and leads to plenty of significant progress in physics and materials science by hosting quantum anomalous Hall effect,axion insulator state,and other quantum phases.An essential ingredient to realize these quantum states is the magnetic gap in the topological surface states induced by the out-of-plane ferromagnetism on the surface of MnBi_(2)Te_(4).However,the experimental observations of the surface gap remain controversial.Here,we report the observation of the surface gap via the point contact tunneling spectroscopy.In agreement with theoretical calculations,the gap size is around 50 me V,which vanishes as the sample becomes paramagnetic with increasing temperature.The magnetoresistance hysteresis is detected through the point contact junction on the sample surface with an out-of-plane magnetic field,substantiating the surface ferromagnetism.Furthermore,the non-zero transport spin polarization coming from the ferromagnetism is determined by the point contact Andreev reflection spectroscopy.Combining these results,the magnetism-induced gap in topological surface states of MnBi_(2)Te_(4) is revealed.
基金supported by the National Natural Science Foundation of China(No.21773115,No.21833002,No.11771435,and No.22073110)the Natural Science Foundation of Jiangsu Province(No.BK20190056)the Fundamental Research Funds for the Central Universities(021514380018)。
文摘Calcium-release-activated calcium(CARC)channels are one of the major pathways of calcium entry in non-excitable cells.Despite a decade or two of research,its regulatory mechanism is not yet thoroughly understood.The slow progress is due to the complexity of its pores(i.e.,Orai)on one hand and the difficulty in capturing its regulatory complex on the other hand.As a result,possible gating mechanisms have often been speculated by exploring the structure and properties of constitutive open mutants.However,there is much debate about how they can truly reflect the gating of CRAC channels under physiological conditions.In the present study,we combined molecular dynamics simulations with free energy calculations to study three dOrai mutants(G170P,H206A,and P288A),and further calculated their current-voltage curves.Results show that these constructs adopt different approaches to maintain their conductive state.Meanwhile they have unique pore structures and distinctive rectification properties and ion selectivity for cations compared to wild-type pores.We conclude that although the mutants may partially capture the gating motion characteristics of wild-type pores,the information obtained from these mutants is likely not a true reflection of CRAC channel gating under physiological conditions.
文摘Bulk materials were synthesized by the Bridgman technique using the elements Cu, Ga, Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity. Optical response (Photoconductivity) and Photoluminescence (PL) and PL-excitation (PLE) at temperatures from 4.2 to 77 K were also used to estimate the band-gap energy of Cu-Ga<sub>3</sub>Se<sub>5</sub>. They show a nearly perfect stoechiometry and present p-type conductivity. CuGa<sub>3</sub>Se<sub>5</sub> either have an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained by Photoconductivity and Photoluminescence (PL) for the different samples is 1.85 eV. Studying the variation of the gap as a function of the temperature shows that the transition is a D-A type. The defects that appear are probably Ga<sub>Cu</sub>.
文摘This article explores controllable Borel spaces, stationary, homogeneous Markov processes, discrete time with infinite horizon, with bounded cost functions and using the expected total discounted cost criterion. The problem of the estimation of stability for this type of process is set. The central objective is to obtain a bounded stability index expressed in terms of the Lévy-Prokhorov metric;likewise, sufficient conditions are provided for the existence of such inequalities.
基金Project supported by the National Natural Science Foundation of China(Grant No.11174233)
文摘The important role of high-energy intramolecular vibrational modes for excitation energy transfer in the detuned photosynthetic systems is studied. Based on a basic dimer model which consists of two two-level systems (pigments) coupled to high-energy vibrational modes, we find that the high-energy intramolecular vibrational modes can enhance the energy transfer with new coherent transfer channels being opened when the phonon energy matches the detuning between the two pigments. As a result, the energy can be effectively transferred into the acceptor. The effective Hamiltonian is obtained to reveal the strong coherent energy exchange among the donor, the acceptor, and the high-energy intramolecular. A semi-classical explanation of the phonon-assisted mechanism is also shown.
基金Supported by the National Natural Science Foundation of China(Grant No.11874233).
文摘Layered material indium selenide(InxSey)is a promising candidate for building next-generation electronic and photonic devices.We report a zirconium aided MBE growth of this van der Waals material.When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400℃at a constant zirconium flux rate of 0.01 ML/min,the polymorphic Inx Sey layer emerges on top of the insulating ZrSe2 layer.Different archetypes,such as InSe,α-In2Se3 and α-In2Se3,are found in the InxSey layers.A negative magnetoresistance of 40%at 2 K under 9 T magnetic field is observed.Such an InxSeyZrSe2 heterostructure with good lattice-matching may serve as a candidate for device applications.
文摘Bulk materials were synthesized by the Bridgman technique using the elements Cu, In and Se. These samples were characterized by Energy Dispersive Spectrometry (EDS) to determine the elemental composition, as well as by X-ray diffraction for structure, hot point probe method for type of conductivity, Optical response (Photoconductivity) and Photoluminescence (PL) to determine the band gap value and Spectroscopic Ellipsometry to find energy levels above the gap in the band scheme at room-temperature. They show a nearly perfect stoechiometry and present a p-type conductivity. CuIn3Se5 either has a Stannite structure, an Ordered Defect Chalcopyrite structure (ODC), or an Ordered Vacancy Chalcopyrite structure (OVC). The gap energy obtained for the different samples was 1.23 eV. Energy levels above the gap in the band scheme were determinate by measuring the dielectric function at room temperature for energies lying between 1.5 and 5.5 eV. Many transitions were observed above the gap for different samples. Spectroscopic Ellipsometry gave evidence for the interpretation of the choice of gap values which were compatible with that obtained from solar spectrum.