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Effect of Injection Parameters on Evaporation and Thermolysis Characteristics of UWS (Urea-Water-Solution) in SCR (Selective Catalytic Reduction) Systems
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作者 Sadashiva Prabhu S Nagaraj Shivappa Nayak Kapilan Natesan 《Journal of Energy and Power Engineering》 2015年第2期222-231,共10页
UWS (optimized Urea-Water Solution) injection system is required to increase the NH3 conversion efficiency of urea-based SCR (Selective Catalytic Reduction) system of modem automobiles. The focus of the current st... UWS (optimized Urea-Water Solution) injection system is required to increase the NH3 conversion efficiency of urea-based SCR (Selective Catalytic Reduction) system of modem automobiles. The focus of the current study is to do parametric studies by simulation in a three-dimensional model using CFD (Computational Fluid Dynamics) code AVL FIRE. Simulations were carried out to study the characteristics of evaporation and thermolysis UWS considering the effect of injection velocity, duration of injection, injection angle and for different types of injection. In the case of the injection velocities up to 20-50 m/sec, the ammonia concentration continues to increase. It is found that as the duration injection decreases, the concentration of ammonia increases. In case of continuous injection, the flow rate is less which results in lower velocity of injection, lesser atomization and slower evaporation resulting lesser conversion of UWS into NH3. Shorter duration of injection leads better atomization with increased velocity of injection which results in faster evaporation and thermolysis. 展开更多
关键词 EVAPORATION THERMOLYSIS SCR UWS injection parameters.
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Simulation model for electron irradiated IGZO thin film transistors 被引量:2
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作者 G K Dayananda C Shantharama Rai +1 位作者 A Jayarama Hyun Jae Kim 《Journal of Semiconductors》 EI CAS CSCD 2018年第2期17-21,共5页
An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O(IGZO) thin-film transistors is developed. The model is developed based on the s... An efficient drain current simulation model for the electron irradiation effect on the electrical parameters of amorphous In–Ga–Zn–O(IGZO) thin-film transistors is developed. The model is developed based on the specifications such as gate capacitance, channel length, channel width, flat band voltage etc. Electrical parameters of un-irradiated IGZO samples were simulated and compared with the experimental parameters and 1 kGy electron irradiated parameters. The effect of electron irradiation on the IGZO sample was analysed by developing a mathematical model. 展开更多
关键词 simulation model IGZO TFT electron irradiation
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