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Applications of Wide Bandgap Semiconductor Materials in High-Power Electronic Devices
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作者 Yucheng Zhou 《World Journal of Engineering and Technology》 2024年第4期1034-1045,共12页
Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconduc... Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconductor materials in high-power electronic devices. The research first compares the physical properties of major wide bandgap materials (such as silicon carbide SiC and gallium nitride GaN), analyzing their advantages over traditional silicon materials. Through theoretical calculations and experimental data analysis, the study assesses the performance of these materials in terms of high breakdown field, high thermal conductivity, and high electron saturation velocity. The research focuses on the application of SiC and GaN devices in power electronics, including high-voltage DC transmission, electric vehicle drive systems, and renewable energy conversion. The study also discusses the potential of wide bandgap materials in RF and microwave applications. However, the research also points out the challenges faced by wide bandgap semiconductor technology, such as material defect control, device reliability, and cost issues. To address these challenges, the study proposes solutions, including improving epitaxial growth techniques, optimizing device structure design, and developing new packaging methods. Finally, the research looks ahead to the prospects of wide bandgap semiconductors in emerging application areas such as quantum computing and terahertz communications. This study provides a comprehensive theoretical foundation and technology roadmap for the application of wide bandgap semiconductor materials in high-power electronic devices, contributing to the development of next-generation high-efficiency energy conversion and management systems. 展开更多
关键词 Wide Bandgap Semiconductors High-Power Electronics Silicon Carbide Gallium Nitride Power Electronics
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Application of Machine Learning in Electronic Device Fault Diagnosis
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作者 Mingqi Ma 《Journal of Computer and Communications》 2024年第11期130-140,共11页
As electronic devices become increasingly complex, traditional fault diagnosis methods face significant challenges. Machine learning technologies offer new opportunities and solutions for electronic device fault diagn... As electronic devices become increasingly complex, traditional fault diagnosis methods face significant challenges. Machine learning technologies offer new opportunities and solutions for electronic device fault diagnosis. This paper explores the application of machine learning in electronic device fault diagnosis, focusing on common machine learning algorithms, data preprocessing techniques, and diagnostic model construction methods. Case study analysis elucidates the advantages of machine learning in improving diagnostic accuracy, reducing diagnosis time, and implementing predictive maintenance. Research indicates that machine learning techniques can effectively enhance the efficiency and precision of electronic device fault diagnosis, providing robust support for device reliability and maintenance strategy optimization. In the future, as artificial intelligence technology further develops, machine learning will play an increasingly important role in the field of electronic device fault diagnosis. 展开更多
关键词 Machine Learning Electronic Devices Fault Diagnosis Predictive Maintenance Artificial Intelligence
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