Vertical heterostructures based on two-dimensional(2D)materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices.Herein,we report the direct construct!on of a...Vertical heterostructures based on two-dimensional(2D)materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices.Herein,we report the direct construct!on of an abnormal graphene/ReSe2 stack on Au foils by a two-step chemical vapor deposition(CVD)strategy.During the second growth stage,mono layer ReSe2 is found to prefere ntially evolve at the irUerface between the first-grown graphene layer and the Au substrate.The unusual stacking behavior is unraveled by in-situ"cutting open"the upper graphene from the defects to expose the lower ReSe2 using scanning tunneling microscopy(STM).From combination of these results with density functional theory calculations,the domain boundaries and edge sites of graphene are proposed to be adsorption sites for Re and Se precursors,further facilitating the growth of ReSe2 at the van der Waals gap of graphene/Au.This work hereby offers an intriguing strategy for obtaining vertical 2D heterostructures featured with an ultra-clean interface and a designed stacking geometry.展开更多
基金the National Natural Science Foundation of China(Nos.51472008,51861135201,51290272,61774003,51502007,and 51672007)the National Key Research and Development Program of China(Nos.2016YFA0200103,2017YFA0205700,and 2017YFA0304600)+1 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Nos.KF201601 and KF201604)"2011 Program”Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter.
文摘Vertical heterostructures based on two-dimensional(2D)materials have attracted widespread interest for their numerous applications in electronic and optoelectronic devices.Herein,we report the direct construct!on of an abnormal graphene/ReSe2 stack on Au foils by a two-step chemical vapor deposition(CVD)strategy.During the second growth stage,mono layer ReSe2 is found to prefere ntially evolve at the irUerface between the first-grown graphene layer and the Au substrate.The unusual stacking behavior is unraveled by in-situ"cutting open"the upper graphene from the defects to expose the lower ReSe2 using scanning tunneling microscopy(STM).From combination of these results with density functional theory calculations,the domain boundaries and edge sites of graphene are proposed to be adsorption sites for Re and Se precursors,further facilitating the growth of ReSe2 at the van der Waals gap of graphene/Au.This work hereby offers an intriguing strategy for obtaining vertical 2D heterostructures featured with an ultra-clean interface and a designed stacking geometry.
