Laser-induced breakdown spectroscopy(LIBS)is widely used for elemental analysis.However,its application for monitoring and analyzing a laser machining process by examining the changes in spectral information warrants ...Laser-induced breakdown spectroscopy(LIBS)is widely used for elemental analysis.However,its application for monitoring and analyzing a laser machining process by examining the changes in spectral information warrants further investigation.In this study,we investigate the effect of laser parameters on the spectra,variations in the time-resolved plasma emission spectra,and the relationship between the morphology of craters and plasma plume evolution during the femtosecond(fs)laser ablation of sapphire.The Boltzmann plot method and Stark’s broadening model are employed to estimate the temporal temperature and electron density of the plasma plume,revealing the process of plasma evolution.This study aims to demonstrate the feasibility of LIBS for online monitoring of laser processing through experimental data and theoretical explanations.展开更多
With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2...With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.展开更多
基金This work was supported by the National Key R&D Program of China(Grant Nos.2022YFB4600402 and 2022YFE0199100)the Natural Science Foundation of Shandong(Grant Nos.ZR2022MF030 and ZR2020ME164)the Natural Science Foundation of Zhejiang(Grant No.LY21F050002).
文摘Laser-induced breakdown spectroscopy(LIBS)is widely used for elemental analysis.However,its application for monitoring and analyzing a laser machining process by examining the changes in spectral information warrants further investigation.In this study,we investigate the effect of laser parameters on the spectra,variations in the time-resolved plasma emission spectra,and the relationship between the morphology of craters and plasma plume evolution during the femtosecond(fs)laser ablation of sapphire.The Boltzmann plot method and Stark’s broadening model are employed to estimate the temporal temperature and electron density of the plasma plume,revealing the process of plasma evolution.This study aims to demonstrate the feasibility of LIBS for online monitoring of laser processing through experimental data and theoretical explanations.
文摘With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.
