Reconfigurable Mott electronics for homogeneous neuromorphic platform

To simplify the fabrication process and increase the versatility of neuromorphic systems,the reconfiguration concept has attracted much attention.Here,we developed a novel electrochemical VO_(2)(EC-VO_(2))device,which can be reconfigured as synapses or LIF neurons.The ionic dynamic doping contributed to the resistance changes of VO_(2),which enables the reversible modulation of device states.The analog resistance switching and tunable LIF functions were both measured based on the same device to demonstrate the capacity of reconfiguration.Based on the reconfigurable EC-VO_(2),the simulated spiking neural network model exhibited excellent performances by using low-precision weights and tunable output neurons,whose final accuracy reached 91.92%.

Embracing the era of neuromorphic computing

In recent years,deep learning has made tremendous achievements in computer vision,natural language processing,man-machine games and so on,where artificial intelligence can reach or go beyond the level of human beings.However,behind so many glories,some serious challenges exist in the bottom hardware,hindering the further development of Artificial Intelligence.

Enhanced exciton diffusion from interlayer charge-transfer transitions in PtSe2/MoSe_(2) van der Waals heterojunction

Artificial van der Waals(vdWs)heterostructures offer unprecedented opportunities to explore and reveal novel synergistic electronic and optical phenomena,which are beneficial for the development of novel optoelectronic devices at atomic limits.However,due to the damage caused by the device fabrication process,their inherent properties such as carrier mobility are obscured,which hinders the improvement of device performance and the incorporation of vdWs materials into next-generation integrated circuits.Herein,combining pump-probe spectroscopic and scanning probe microscopic techniques,the intrinsic optoelectronic properties of PtSe_(2)/MoSe_(2)heterojunction were nondestructively and systematically investigated.The heterojunction exhibits a broad-spectrum optical response and maintains ultrafast carrier dynamics(interfacial charge transfer~0.8 ps and carrier lifetime~38.2 ps)simultaneously.The in-plane exciton diffusion coefficient of the heterojunction was extracted(19.4±7.6 cm^(2)∙s^(−1)),and its exciton mobility as high as 756.8 cm^(2)∙V−1∙s^(−1)was deduced,exceeding the value of its components.This enhancement was attributed to the formation of an n-type Schottky junction between PtSe_(2)and MoSe_(2),and its built-in electric field assisted the ultrafast transfer of photogenerated carriers from MoSe_(2)to PtSe_(2),enhancing the in-plane exciton diffusion of the heterojunction.Our results demonstrate that PtSe_(2)/MoSe_(2)is suitable for the development of broadspectrum and sensitive optoelectronic devices.Meanwhile,the results contribute to a fundamental understanding of the performance of various optoelectronic devices based on such PtSe_(2)two-dimensional(2D)heterostructures.