Observation of oscillations in the transport for atomic layer MoS_2

In our experiment, an atomic layer MoS2structure grown on SiO2/Si substrates is used in transport test. The voltage U14,23 oscillates and the corresponding period varies with applied current. The largest period appears at 45 μA. The oscillation periods are different when samples are under laser radiation or in darkness. We discover that under the laser irradiation, the oscillation period occurs at lower current than in the darkness case. Meanwhile, the drift velocity is estimated at ~10~7 cm/s. Besides, by studying the envelope of U14,23 versus applied current, we see a beating phenomenon at a certain current value. The beating period in darkness is larger than under laser irradiation. The difference between beating periods reveals the energy difference of electrons. Similar results are obtained by using different laser power densities and different light sources. The possible mechanism behind the oscillation period is discussed.

Characterization of atomic-layer MoS_2 synthesized using a hot filament chemical vapor deposition method

Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.

Model of output characteristics of giant magnetoresistance(GMR) multilayer sensor

In this paper,the giant magnetoresistance(GMR)multilayer sensor is fabricated with a Wheatstone bridge,and it exhibits excellent performance with a sensitivity of 2.8349 mV/(V/Oe)(1 Oe=79.5775 A·m^-1)and a saturation field of 26 Oe along the sensitive axis.The GMR sensor is also characterized in a high magnetic field.The sensitivity decreases from 2.8349 mV/(V/Oe)at an angle of 0°to 0.0175 mV/(V/Oe)at an angle of 90°.Then,the sensor is placed in a series of rotating magnetic fields.We propose a model to express the output characteristics of the GMR multilayer sensor.The transfer curves of the sensor can be shown as two exactly symmetrical circles with an increasing radius when the magnetic field increases.The experimental results are consistent with the simulation results of the model.The advantage of this model is that it is simpler and more intuitive.

Magnetic behaviors of cerium oxide-based thin films deposited using electrochemical method

Zn and Co multi-doped CeO2 thin films have been prepared using an anodic electrochemical method. The structures and magnetic behaviors are characterized by several techniques, in which the oxygen states in the lattice and the absorptive oxygen bonds at the surface are carefully examined. The absorptive oxygen bond is about 50% of the total oxygen bond by using a semi-quantitative method. The value of actual stoichiometry δ′ is close to 2. The experimental results indicate that the thin films are of a cerium oxide-based solid solution with few oxygen vacancies in the lattice and many absorptive oxygen bonds at the surface. Week ferromagnetic behaviors were evidenced by observed M-H hysteresis loops at room temperature. Furthermore, an evidence of relative ferromagnetic contributions was revealed by the temperature dependence of magnetization. It is believed that the ferromagnetic contributions exhibited in the M-H loops originate from the absorptive oxygen on the surface rather than the oxygen vacancies in the lattice.

Realization of artificial skyrmion in CoCrPt/NiFe bilayers

Skyrmion, as a quasi-particle structure, has attracted much attention due to its potential applications in future spintronic devices. Artificial skyrmion structure has aroused great interest as it can be stabilized at room temperature, without needing to incorporate materials with Dzyaloshinskii–Moriya interaction(DMI) into it. In this paper, it is found that the artificial skyrmion structure can be realized in CoCrPt/NiFe bilayers by micromagnetic simulations. The critical magnetic field of the core decreases as the diameter of the NiFe soft magnetic layer increases. The artificial skyrmion has excellent topological protection, and the critical magnetic field of plane is about 76 mT(760 Oe, 1 Oe = 79.5775 A·m-1). The external magnetic field plays a key role in determining the core diameter of the skyrmion, and the artificial skyrmion can be realized in CoCrPt/Cu/CoCrPt/NiFe four-layer with a diameter of 13 nm.

Magnetic transition and large reversible magnetocaloric effect in EuCu_(1.75)P_2 compound

The magnetocaloric effect（MCE） in EuCu1.75P2 compound is studied by the magnetization and heat capacity measurements.Magnetization and modified Arrott plots indicate that the compound undergoes a second-order phase transition at TC ～ 51 K.A large reversible MCE is observed around TC.The values of maximum magnetic entropy change（-△SxMma） reach 5.6 J·kg^-1·K-1 and 13.3 J·kg^-1·K-1 for the field change of 2 T and 7 T,respectively,with no obvious hysteresis loss in the vicinity of Curie temperature.The corresponding maximum adiabatic temperature changes（△Tadmax） are evaluated to be 2.1 K and 5.0 K.The magnetic transition and the origin of large MCE in EuCu1.75P2 are also discussed.

Field-free switching through bulk spin−orbit torque in L10-FePt films deposited on vicinal substrates

L1_(0)-FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy(PMA),enabling thermally stabile memory cells to scale down to 3 nm.The recently discovered“bulk”spin−orbit torques in L1_(0)-FePt provide an efficient and scalable way to manipulate the L1_(0)-FePt magnetization.However,the existence of an external field during the switching limits its practical application,and therefore field-free switching of L1_(0)-FePt is highly demanded.In this manuscript,by growing the L1_(0)-FePt film on vicinal MgO(001)substrates,we realize the field-free switching of L1_(0)-FePt.This method is different from previously established strategies as it does not need to add other functional layers or create asymmetry in the film structure.The dependence on the vicinal angle,film thickness,and growth temperature demonstrates a wide operation window for the fieldfree switching of L1_(0)-FePt.We confirm the physical origin of the field-free switching is due to the tilted anisotropy of L1_(0)-FePt induced by the vicinal surface.We also quantitatively characterize the spin-orbit torques in the L1_(0)-FePt films.Our results extend beyond the established strategies to realize field-free switching,and potentially could be applied to mass production.