Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of...Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of this material in nuclear energy devices or for the proposed getting technique of electronic devices of silicon carbide. Much less is known about helium behavior in silicon carbide than in silicon and metals. Our recent study with transmission electron microscopy (TEM) indicated that the formation behavior of helium precipitates i.e.展开更多
The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior o...The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of展开更多
The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specim...The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2.展开更多
Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effectiv...Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with展开更多
文摘Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of this material in nuclear energy devices or for the proposed getting technique of electronic devices of silicon carbide. Much less is known about helium behavior in silicon carbide than in silicon and metals. Our recent study with transmission electron microscopy (TEM) indicated that the formation behavior of helium precipitates i.e.
文摘The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of
文摘The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2.
文摘Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with
