GaN films grown on(111)Si substrate with different lattice parameters of the AlN buffer layer by metal–organic chemical vapor deposition are studied.The stress states obtained by different test methods are compared a...GaN films grown on(111)Si substrate with different lattice parameters of the AlN buffer layer by metal–organic chemical vapor deposition are studied.The stress states obtained by different test methods are compared and it is found that the lattice parameter of the AlN buffer layer may have a significant effect on the stress state in the initial stage of subsequent GaN film growth.A larger compressive stress is beneficial to improved surface morphology and crystal quality of GaN film.The results of further orthogonal experiments show that an important factor affecting the lattice parameter is the growth rate of the AlN buffer layer.This work may be helpful for realizing simple GaN-on-Si structures and thus reducing the costs of growth processes.展开更多
基金supported by Beijing Municipal Science&Technology Commission,Administrative Commission of Zhongguancun Science Park(Grant Nos.Z211100007921022 and Z211100004821001)the National Natural Science Foundation of China(Grant Nos.62034008,62074142,62074140,61974162,61904172,61874175,62127807,and U21B2061)+3 种基金Key Research and Development Program of Jiangsu Province(Grant No.BE2021008-1)Beijing Nova Program(Grant No.202093)Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB43030101)Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2019115).
文摘GaN films grown on(111)Si substrate with different lattice parameters of the AlN buffer layer by metal–organic chemical vapor deposition are studied.The stress states obtained by different test methods are compared and it is found that the lattice parameter of the AlN buffer layer may have a significant effect on the stress state in the initial stage of subsequent GaN film growth.A larger compressive stress is beneficial to improved surface morphology and crystal quality of GaN film.The results of further orthogonal experiments show that an important factor affecting the lattice parameter is the growth rate of the AlN buffer layer.This work may be helpful for realizing simple GaN-on-Si structures and thus reducing the costs of growth processes.
