Copper single crystal specimens with the longitudinal axis parallel to the [013] double-slip-orientation were grown through Bridgman technique. The fatigue tests were performed using a symmetric tension-compression lo...Copper single crystal specimens with the longitudinal axis parallel to the [013] double-slip-orientation were grown through Bridgman technique. The fatigue tests were performed using a symmetric tension-compression load mode at room temperature in an open-air and a 0.5 mol/L NaCl solution, respectively. The dislocation microstructures were observed with scanning electron microscopy (SEM) by the electron channeling contrast (ECC) and transmission electron microscopy (TEM). The results show that the saturation dislocation microstructures during the corrosion fatigue in the aqueous solution of 0.5 mol/L NaCI, mainly consisted of labyrinth, wall and vein dislocation structures, which differs from the dislocation structures of the walls and veins in an open-air environment.展开更多
Multilayer thin films of TiN/SiNx have been deposited onto heated Si 100 substra tes (200℃) by reactive dc-magnetron sputtering from Ti and Si targets in an Ar- N2 gas mixture. The rotation speed of the substrate hol...Multilayer thin films of TiN/SiNx have been deposited onto heated Si 100 substra tes (200℃) by reactive dc-magnetron sputtering from Ti and Si targets in an Ar- N2 gas mixture. The rotation speed of the substrate holder was varied from 1 to 20rpm, while target currents were held constant, to produce bilayer periods vary ing from approximately 22 to 0.6nm. These multilayer films were characterized by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), scanning electron microscopy (SEM), and microhardness measurements. TEM and SEM studies showed elimination of columnar structure in TiN, owing to the in corporation of amorphous SiNx layers. The crystallinity of TiN and amorphous nat ure of SiNx were confirmed by high resolution TEM. An optimum rotation speed was observed, at which hardness was a maximum. The resulting bilayer period was fou nd to be approximately 1.6nm, which resulted in a significant improvement in mic rohardness (~57GPa). The rms surface roughness for this film was less than 1.5nm .展开更多
文摘Copper single crystal specimens with the longitudinal axis parallel to the [013] double-slip-orientation were grown through Bridgman technique. The fatigue tests were performed using a symmetric tension-compression load mode at room temperature in an open-air and a 0.5 mol/L NaCl solution, respectively. The dislocation microstructures were observed with scanning electron microscopy (SEM) by the electron channeling contrast (ECC) and transmission electron microscopy (TEM). The results show that the saturation dislocation microstructures during the corrosion fatigue in the aqueous solution of 0.5 mol/L NaCI, mainly consisted of labyrinth, wall and vein dislocation structures, which differs from the dislocation structures of the walls and veins in an open-air environment.
文摘Multilayer thin films of TiN/SiNx have been deposited onto heated Si 100 substra tes (200℃) by reactive dc-magnetron sputtering from Ti and Si targets in an Ar- N2 gas mixture. The rotation speed of the substrate holder was varied from 1 to 20rpm, while target currents were held constant, to produce bilayer periods vary ing from approximately 22 to 0.6nm. These multilayer films were characterized by atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), scanning electron microscopy (SEM), and microhardness measurements. TEM and SEM studies showed elimination of columnar structure in TiN, owing to the in corporation of amorphous SiNx layers. The crystallinity of TiN and amorphous nat ure of SiNx were confirmed by high resolution TEM. An optimum rotation speed was observed, at which hardness was a maximum. The resulting bilayer period was fou nd to be approximately 1.6nm, which resulted in a significant improvement in mic rohardness (~57GPa). The rms surface roughness for this film was less than 1.5nm .
