Based on a method combined artificial neural network (ANN) with particle swarm optimization (PSO) algorithm, the thermo-mechanical fatigue reliability of plastic ball grid array (PBGA) solder joints was studied. The s...Based on a method combined artificial neural network (ANN) with particle swarm optimization (PSO) algorithm, the thermo-mechanical fatigue reliability of plastic ball grid array (PBGA) solder joints was studied. The simulation experiments of accelerated thermal cycling test were performed by ANSYS software. Based on orthogonal array experiments, a back-propagation artificial neural network (BPNN) was used to establish the nonlinear multivariate relationship between thermo-mechanical fatigue reliability and control factors. Then, PSO was applied to obtaining the optimal levels of control factors by using the output of BPNN as the affinity measure. The results show that the control factors, such as print circuit board (PCB) size, PCB thickness, substrate size, substrate thickness, PCB coefficient of thermal expansion (CTE), substrate CTE, silicon die CTE, and solder joint CTE, have a great influence on thermo-mechanical fatigue reliability of PBGA solder joints. The ratio of signal to noise of ANN-PSO method is 51.77 dB and its error is 33.3% less than that of Taguchi method. Moreover, the running time of ANN-PSO method is only 2% of that of the BPNN. These conclusions are verified by the confirmative experiments.展开更多
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiat...In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.展开更多
基金Project(60371046) supported by the National Natural Science Foundation of ChinaProject(9140C0301060C03001) supported by the National Defense Science and Technology Foundation of Key Laboratory, China
文摘Based on a method combined artificial neural network (ANN) with particle swarm optimization (PSO) algorithm, the thermo-mechanical fatigue reliability of plastic ball grid array (PBGA) solder joints was studied. The simulation experiments of accelerated thermal cycling test were performed by ANSYS software. Based on orthogonal array experiments, a back-propagation artificial neural network (BPNN) was used to establish the nonlinear multivariate relationship between thermo-mechanical fatigue reliability and control factors. Then, PSO was applied to obtaining the optimal levels of control factors by using the output of BPNN as the affinity measure. The results show that the control factors, such as print circuit board (PCB) size, PCB thickness, substrate size, substrate thickness, PCB coefficient of thermal expansion (CTE), substrate CTE, silicon die CTE, and solder joint CTE, have a great influence on thermo-mechanical fatigue reliability of PBGA solder joints. The ratio of signal to noise of ANN-PSO method is 51.77 dB and its error is 33.3% less than that of Taguchi method. Moreover, the running time of ANN-PSO method is only 2% of that of the BPNN. These conclusions are verified by the confirmative experiments.
文摘In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions implantation were studied under X-ray total-dose irradiation of three bias conditions. It has been found experimentally that back gate threshold shift and leakage current were greatly reduced during irradiation for hardened transistors, comparing to control ones. It has been confirmed that the improvement of total-dose properties of SOI devices is attributed to the silicon nanocrystals (nanoclusters) in buried oxides introduced by ion implantation.
