Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Fihn Transistors

The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.

Experimental study on the accumulative effect of multiple pulses on acceleration sensor

Intentional electromagnetic interference is a serious threat to the safety of electronic devices. Multiple electromagnetic pulses will be coupled and transmitted to electronic devices through the cables.Accumulative effects are generated, which make it easier for damage to occur in the electronic devices. In this article, the working principle of micro-silicon acceleration sensors is introduced. The accumulative effects of multiple pulses on acceleration sensors is studied by a large number of injection experiments.The accumulation trends of multiple pulses with different pulse numbers and intervals are analyzed. The damaged structures inside abnormal sensor amplifiers were observed via optical microscopy and scanning electron microscopy. The experimental results show that the accumulative effect is strengthened with increased pulse number or decreased pulse interval, and the threshold voltage for multiple pulses on the acceleration sensor decreases. The threshold voltage for a single pulse is 321.57 V. When the pulse interval is 1 μs and the pulse number is 5, the threshold voltage for multiple pulses is 163.42 V,which is reduced by 49.12% compared with a single pulse. These results provide a reference for the damage design of electromagnetic pulse weapons.

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

Low-frequency noise（LFN） in all operation regions of amorphous indium zinc oxide（a-IZO） thin film transistors（TFTs） with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric,and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2 O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge＇s parameter is about 1.18×10^-3.Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the △N-△μ model, and the total trap density near the IZO/oxide interface is about 1.23×10^18 cm^-3eV^-1.

Microstructure-based multiphysics modeling for semiconductor integration and packaging

Semiconductor technology and packaging is advancing rapidly toward system integration where the packaging is co-designed and co-manufactured along with the wafer fabrication.However,materials issues,in particular the mesoscale microstructure,have to date been excluded from the integrated product design cycle of electronic packaging due to the myriad of materials used and the complex nature of the material phenomena that require a multiphysics approach to describe.In the context of the materials genome initiative,we present an overview of a series of studies that aim to establish the linkages between the material microstructure and its responses by considering the multiple perspectives of the various multiphysics fields.The microstructure was predicted using thermodynamic calculations,sharp interface kinetic models,phase field,and phase field crystal modelingtechniques.Based on the predicted mesoscale microstructure,linear elastic mechanical analyses and electromigration simulations on the ultrafine interconnects were performed.The microstructural index extracted by a method based on singular value decomposition exhibits a monotonous decrease with an increase in the interconnect size.An artificial neural network-based fitting revealed a nonlinear relationship between the microstructure index and the average von Mises stress in the ultrafine interconnects.Future work to address the randomness of microstructure and the resulting scatter in the reliability is discussed in this study.