Waveguide-integrated optical modulators are indispensable for on-chip optical interconnects and optical computing.To cope with the ever-increasing amount of data being generated and consumed,ultrafast waveguide-integr...Waveguide-integrated optical modulators are indispensable for on-chip optical interconnects and optical computing.To cope with the ever-increasing amount of data being generated and consumed,ultrafast waveguide-integrated optical modulators with low energy consumption are highly demanded.In recent years,two-dimensional(2D)materials have attracted a lot of attention and have provided tremendous opportunities for the development of high-performance waveguide-integrated optical modulators because of their extraordinary optoelectronic properties and versatile compatibility.This paper reviews the state-of-the-art waveguide-integrated optical modulators with 2D materials,providing researchers with the developing trends in the field and allowing them to identify existing challenges and promising potential solutions.First,the concept and fundamental mechanisms of optical modulation with 2D materials are summarized.Second,a review of waveguide-integrated optical modulators employing electro-optic,all-optic,and thermo-optic effects is provided.Finally,the challenges and perspectives of waveguide-integrated modulators with 2D materials are discussed.展开更多
Nanoscale light sources with high speed of electrical modulation and low energy consumption are key components for nanophotonics and optoelectronics.The record-high carrier mobility and ultrafast carrier dynamics of g...Nanoscale light sources with high speed of electrical modulation and low energy consumption are key components for nanophotonics and optoelectronics.The record-high carrier mobility and ultrafast carrier dynamics of graphene make it promising as an atomically thin light emitter which can be further integrated into arbitrary platforms by van der Waals forces.However,due to the zero bandgap,graphene is difficult to emit light through the interband recombination of carriers like conventional semiconductors.Here,we demonstrate ultrafast thermal light emitters based on suspended graphene/hexagonal boron nitride(Gr/hBN)heterostructures.Electrons in biased graphene are significantly heated up to 2800 K at modest electric fields,emitting bright photons from the near-infrared to the visible spectral range.By eliminating the heat dissipation channel of the substrate,the radiation efficiency of the suspended Gr/hBN device is about two orders of magnitude greater than that of graphene devices supported on SiO2or hBN.Wefurther demonstrate that hot electrons and low-energy acoustic phonons in graphene are weakly coupled to each other and are not in full thermal equilibrium.Direct cooling ofhigh-temperature hot electrons to low-temperature acoustic phonons is enabled by the significant near-field heat transfer at the highly localized Gr/hBN interface,resulting in ultrafast thermal emission with up to 1 GHz bandwidth under electrical excitation.It is found thatsuspending the Gr/hBN heterostructures on the SiO2trenches significantly modifies the light emission due to the formation of the optical cavity and showed a~440%enhancement inintensity at the peak wavelength of 940 nm compared to the black-body thermal radiation.The demonstration of electrically driven ultrafast light emission from suspended Gr/hBNheterostructures sheds the light on applications of graphene heterostructures in photonicintegrated circuits,such as broadband light sources and ultrafast thermo-optic phase modulators.展开更多
Electro-optic(EO) modulator plays a very critical role in the optical communication systems. Here, we report a stimulated thin-film lithium niobate(LN) modulator with a half-wave voltage-length product of 1.8 V·c...Electro-optic(EO) modulator plays a very critical role in the optical communication systems. Here, we report a stimulated thin-film lithium niobate(LN) modulator with a half-wave voltage-length product of 1.8 V·cm, which can successfully achieve modulation and demodulation of a 1 GHz sinusoidal signal with an amplitude of 5 V in experiment. The optical loss caused by metal electrodes is reduced by optimizing the waveguide structure and depositing silica onto the waveguide, and group-velocity matching and characteristic impedance matching are achieved by optimizing the buffer silica layer and the electrode structure for larger bandwidth, which simultaneously improves the modulation efficiency and bandwidth performance. Our work demonstrated here paves a foundation for integrated photonics.展开更多
基金funding support from the National Major Research and Development Program(2019YFB2203603)the National Science Fund for Distinguished Young Scholars(61725503)+2 种基金the National Natural Science Foundation of China(NSFC)(62275273,11804387,and 91950205)the China Postdoctoral Science Foundation(2020M681847)the Zhejiang Provincial Natural Science Foundation(LZ18F050001).
文摘Waveguide-integrated optical modulators are indispensable for on-chip optical interconnects and optical computing.To cope with the ever-increasing amount of data being generated and consumed,ultrafast waveguide-integrated optical modulators with low energy consumption are highly demanded.In recent years,two-dimensional(2D)materials have attracted a lot of attention and have provided tremendous opportunities for the development of high-performance waveguide-integrated optical modulators because of their extraordinary optoelectronic properties and versatile compatibility.This paper reviews the state-of-the-art waveguide-integrated optical modulators with 2D materials,providing researchers with the developing trends in the field and allowing them to identify existing challenges and promising potential solutions.First,the concept and fundamental mechanisms of optical modulation with 2D materials are summarized.Second,a review of waveguide-integrated optical modulators employing electro-optic,all-optic,and thermo-optic effects is provided.Finally,the challenges and perspectives of waveguide-integrated modulators with 2D materials are discussed.
基金supported by the National Natural Science Foundation of China(Nos.12174444 and 52202195)the Natural Science Foundation of Hunan Province(2020RC3032)。
文摘Nanoscale light sources with high speed of electrical modulation and low energy consumption are key components for nanophotonics and optoelectronics.The record-high carrier mobility and ultrafast carrier dynamics of graphene make it promising as an atomically thin light emitter which can be further integrated into arbitrary platforms by van der Waals forces.However,due to the zero bandgap,graphene is difficult to emit light through the interband recombination of carriers like conventional semiconductors.Here,we demonstrate ultrafast thermal light emitters based on suspended graphene/hexagonal boron nitride(Gr/hBN)heterostructures.Electrons in biased graphene are significantly heated up to 2800 K at modest electric fields,emitting bright photons from the near-infrared to the visible spectral range.By eliminating the heat dissipation channel of the substrate,the radiation efficiency of the suspended Gr/hBN device is about two orders of magnitude greater than that of graphene devices supported on SiO2or hBN.Wefurther demonstrate that hot electrons and low-energy acoustic phonons in graphene are weakly coupled to each other and are not in full thermal equilibrium.Direct cooling ofhigh-temperature hot electrons to low-temperature acoustic phonons is enabled by the significant near-field heat transfer at the highly localized Gr/hBN interface,resulting in ultrafast thermal emission with up to 1 GHz bandwidth under electrical excitation.It is found thatsuspending the Gr/hBN heterostructures on the SiO2trenches significantly modifies the light emission due to the formation of the optical cavity and showed a~440%enhancement inintensity at the peak wavelength of 940 nm compared to the black-body thermal radiation.The demonstration of electrically driven ultrafast light emission from suspended Gr/hBNheterostructures sheds the light on applications of graphene heterostructures in photonicintegrated circuits,such as broadband light sources and ultrafast thermo-optic phase modulators.
基金supported by the Science and Technology Planning Project of Hunan Province(Nos.2018JJ1033 and 2017RS3039).
文摘Electro-optic(EO) modulator plays a very critical role in the optical communication systems. Here, we report a stimulated thin-film lithium niobate(LN) modulator with a half-wave voltage-length product of 1.8 V·cm, which can successfully achieve modulation and demodulation of a 1 GHz sinusoidal signal with an amplitude of 5 V in experiment. The optical loss caused by metal electrodes is reduced by optimizing the waveguide structure and depositing silica onto the waveguide, and group-velocity matching and characteristic impedance matching are achieved by optimizing the buffer silica layer and the electrode structure for larger bandwidth, which simultaneously improves the modulation efficiency and bandwidth performance. Our work demonstrated here paves a foundation for integrated photonics.