Direct current（DC） reverse step voltage stress is applied on the gate of an AlGaN/GaN high-electron mobility transistor（HEMT）.Experiments show that parameters degenerate under stress.Large-signal parasitic source/...Direct current（DC） reverse step voltage stress is applied on the gate of an AlGaN/GaN high-electron mobility transistor（HEMT）.Experiments show that parameters degenerate under stress.Large-signal parasitic source/drain resistance（RS/RD） and gate-source forward I-V characteristics are recoverable after breakdown of the device under test（DUT）.Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon,and surface state recovery is the major reason for the recovery of device parameters.展开更多
基金Project supported by the Key Science and Technology Foundation of Guangdong Province,China (Grant Nos. 2011A080801005 and 2010A080802001)the Guiding Project on the Integration of Industry,Education and Research of Guangdong Province,China (Grant No. 00802440123641045)the Strategic Emerging Industries,the Special Fund for LED Industry Projects of Guangdong Province,China (Grant No. 2012A080304003)
文摘Direct current（DC） reverse step voltage stress is applied on the gate of an AlGaN/GaN high-electron mobility transistor（HEMT）.Experiments show that parameters degenerate under stress.Large-signal parasitic source/drain resistance（RS/RD） and gate-source forward I-V characteristics are recoverable after breakdown of the device under test（DUT）.Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon,and surface state recovery is the major reason for the recovery of device parameters.
